BD442 반도체 회로 부품 판매점
Medium Power Linear and Switching Applications
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 Fairchild Semiconductor |
BD440/442
Medium Power Linear and Switching
Applications
• Complement to BD439, BD441 respectively
PNP Epitaxial Silicon Transistor
1 TO-126
1. Emitter 2.Collector 3.Base
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD440
: BD442
VCES
Collector-Emitter Voltage
: BD440
: BD442
VCEO
Collector-Emitter Voltage
: BD440
: BD442
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Value
- 60
- 80
- 60
- 80
- 60
- 80
-5
-4
-7
-1
36
150
- 65 ~ 1 50
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
Collector-Emitter Sustaining Voltage
: BD440
: BD442
IC = - 100mA, IB = 0
ICBO
ICES
IEBO
hFE
Collector Cut-off Current : BD440
: BD442
Collector Cut-off Current : BD440
: BD442
Emitter Cut-off Current
* DC Current Gain
: BD440
: BD442
: BD440
: BD442
: BD440
: BD442
VCB = - 60V, IE = 0
VCB = - 80V, IE = 0
VCE = - 60V, VBE = 0
VCE = - 80V, VBE = 0
VEB = - 5V, IC = 0
VCE = - 5V, IC = - 10mA
VCE = - 1V, IC = - 500mA
VCE = - 1V, IC = - 2A
VCE(sat)
VBE(on)
* Collector-Emitter Saturation Voltage
* Base-Emitter ON Voltage
fT Current Gain Bandwidth Product
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
IC = - 2A, IB = - 0.2A
VCE = - 5V, IC = - 10mA
VCE = -1 V, IC = - 2A
VCE = - 1V, IC = - 250mA
Min.
-60
-80
20
15
40
40
25
15
3
Typ. Max. Units
- 100
- 100
- 100
- 100
-1
140
140
140
140
V
V
µA
µA
µA
µA
mA
-0.58
- 0.8
- 1.5
V
V
V
MHz
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
1000
100
VCE = -1V
10
1
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
-10
-5.0
VCE = -1V
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
-0.0
-0.0 -0.3 -0.5 -0.8 -1.0 -1.3 -1.5 -1.8 -2.0
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter On Voltage
-10
IC MAX. (Pulsed)
10ms 1ms
IC Max. (Continuous)
DC
100µs
-1
1µs
10µs
-0.1
-1
BD440
BD442
-10
-100
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
-1
IC = 10 IB
-0.1
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
-10
Figure 2. Collector-Emitter Saturation Voltage
1000
100
10
1
-0.1 -1 -10 -100
VCB[V], COLLECTOR BASE VOLTAGE
Figure 4. Collector-Base Capacitance
48
42
36
30
24
18
12
6
0
0 25 50 75 100 125 150 175 200
TC[oC], CASE TEMPERATURE
Figure 6. Power Derating
Rev. A1, June 2001
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BD442 data
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