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Fairchild Semiconductor |
BD157/158/159
Low Power Fast Switching Output Stages
• For T.V Radio Audio Output Amplifiers
1 TO-126
1. Emitter 2.Collector 3.Base
NPN Epitxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BD157
: BD158
: BD159
VCEO
Collector-Emitter Voltage
: BD157
: BD158
: BD159
VEBO
IC
ICP
IB
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO
*Collector-Emitter Breakdown Voltage
: BD157
: BD158
: BD159
IC = 1mA, IB = 0
ICBO
Collector Cut-off Current
: BD157
: BD158
: BD159
IEBO
Emitter Cut-off Current
hFE * DC Current Gain
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
VCB = 275V, IE = 0
VCB = 325V, IE = 0
VCB = 375V, IE = 0
VEB = 5V, IC = 0
VCE = 10V, IC = 50mA
Value
275
325
375
250
300
350
5
0.5
1.0
0.25
20
50
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
°C
°C
Min. Typ. Max. Units
250 V
300 V
350 V
100 µA
100 µA
100 µA
100 µA
30 240
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
1000
100
VCE = 10V
10
1
01.E0-040 1
01.E0 0- 31
0.01
0.1
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1
10
IC MAX. (Pulsed)
1
0.1
10µs
100µs
0.01
1E-3
1
BD157
BD158
BD159
10 100
VCE[V], COLLECTOR-EMITTER VOLTAGE
1000
Figure 3. Safe Operating Area
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1E-4
IC = 10 IB
1E-3
0.01
0.1
IC[A], COLLECTOR CURRENT
1
Figure 2. Collector-Emitter Saturation Voltage
25
20
15
10
5
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
Figure 4. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
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