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Mitsubishi Electric Semiconductor |
BCR5PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54 2.54
0.5 2.6
• IT (RMS) ........................................................................ 5A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 20mA (10mA) V5
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
123
2
∗ Measurement point of
case temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=95°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
5
50
10.4
3
0.3
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
Gate trigger voltage V2
Gate trigger current V2
Gate non-trigger voltage
Thermal resistance
!
@
#
!
@
#
Tj=125°C, VDRM applied
Tc=25°C, ITM=7A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
V5. High sensitivity (IGT≤10mA) is also available. (IGT item 1)
Limits
Min. Typ. Max.
Unit
— — 2.0 mA
— — 1.8
V
— — 1.5
V
— — 1.5
V
— — 1.5
V
— — 20 V5 mA
— — 20 V5 mA
— — 20 V5 mA
0.2 —
—
V
— — 4.0 °C/ W
V3 — — V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R—
L5
12 600
R
L
—
5
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–2.5A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7
5
3
2
101 Tj = 125°C
7
5
3
2
100 Tj = 25°C
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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