BCR400W 반도체 회로 부품 판매점
Application Considerations for the Integrated Bias Control Circuits
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 Infineon Technologies AG |
BCR400W
Active Bias Controller
Characteristics
Supplies stable bias current even at low battery
voltage and extreme ambient temperature variation
Low voltage drop of 0.7V
Application notes
Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
Ideal supplement for Sieget and other transistors
also usable as current source up to 5mA
3
4
2
1 VPS05605
43
12
EHA07188
Type
Marking
Pin Configuration
Package
BCR400W W4s
1=GND/ENPN 2=Contr/BNPN 3VS 4=Rext/CNPN SOT343
(ENPN, BNPN, CNPN are electrodes of a stabilized NPN transistor)
Maximum Ratings
Parameter
Source voltage
Control current
Control voltage
Reverse voltage between all terminals
Total power dissipation, TS = 117 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point1)
Symbol
VS
IContr.
VContr.
VR
Ptot
Tj
Tstg
RthJS
Value
18
10
16
0.5
330
150
-65 ... 150
100
Unit
V
mA
V
mW
°C
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 Aug-07-2001
BCR400W
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Additional current consumption
VS = 3 V
Lowest stabilizing current
VS = 3 V
I0 - 20 40
Imin - 0.1 -
Unit
µA
mA
DC Characteristics with stabilized NPN-Transistors
Lowest sufficient battery voltage
VSmin
IB (NPN) < 0.5mA
Voltage drop (VS - VCE)
Vdrop
IC = 25 mA
Change of IC versus hFE
IC/IC
hFE = 50
Change of IC versus VS
IC/IC
VS = 3 V
Change of IC versus TA
IC/IC
- 1.6 - V
- 0.65 -
- 0.08 - hFE /
hFE
- 0.15 - VS/VS
- 0.2 - %/K
2 Aug-07-2001
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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