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BCR400R 반도체 회로 부품 판매점

Application Considerations for the Integrated Bias Control Circuits



Infineon Technologies AG 로고
Infineon Technologies AG
BCR400R 데이터시트, 핀배열, 회로
Silicon Discrete Components
Application Considerations
for the Integrated Bias Control Circuits
BCR400R and BCR400W
Application Note No. 014
Figure 1 RF Transistor Controlled by BCR400
Operating Point
• BCR400 stabilizes the operating current (i.e. IC or ID), the collector (or drain) voltage
depends on the supply voltage: VCE = VS - 0.65 V
• The voltage drop of approximately 0.65 V on Rext (i.e. between pins 3 and 4 of
BCR400) is almost constant (Rext = 0.65 V x IC)
• In case a lower VCE is really required (e.g. to prevent exceeding of maximum VCE or
VDS ratings), an additional resistor R = (VS - VCE - 0.65 V) / IC can be inserted either
between pin 4 and collector (or drain) or in series to the supply voltage VS, thus
providing an additional voltage drop.
Application Note
1
2000-07-27


BCR400R 데이터시트, 핀배열, 회로
Application Considerations for the Integrated
Bias Control Circuits BCR400R and BCR400W
Stability
BCR400 stabilizes bias current of transistors in an active control loop. In order to avoid
loop oscillation (hunting), time constants must be chosen adequately, i.e. C1 >= 10 x C2.
It is strongly recommended that the entire DC circuit is analyzed and optimized for
stability with one of the commercially available SPICE simulators.
Thermal considerations
The collector or drain current of a stabilized RF transistor does not directly affect
BCR400, as it must only provide the base current (or gate bias current). Even as a stand-
alone current source it is not possible to exceed Ptot (up to Ts = 115°C), if the maximum
ratings of Vs and Icontr are adhered to (see data sheet).
Preliminary SPICE Parameters
*****************************************************************
.MODEL DI400 D(
+
IS= 6.00E-15
N= 1.20E+00 RS= 5.0E+01
+ IBV= 1.00E-04 BV= 7.50E+01
+ M= 1.00E-01 CJO= 6.87E-13 EG= 1.11E+00
+ TT= 8.66E-09 VJ= 2.00E+00 XTI= 5.00E+00)
* one internal Diode of BCR400
*****************************************************************
.MODEL TR400 PNP(
+ BF= 3.00E+02 BR= 3.38E+00 CJC= 2.00E-12
+ CJE= 1.56E-11 CJS= 0.00E+00 EG= 1.11E+00 FC= 8.28E-01
+ IKF= 1.00E-02 IKR= 0.40E-02 IRB= 0.30E-06 IS= 0.30E-14
+ ISC= 2.00E-14 ISE= 0.50E-13 ITF= 0.50E-01
+ MJC= 3.49E-01 MJE= 4.18E-01 MJS= 3.30E-01 NC= 1.19E+00
+ NE= 1.83E+00 NF= 1.00E+00 NR= 1.00E+00 PTF= 0.00E+00
+ RB= 1.00E+02 RBM= 1.00E+01 RC= 5.00E+00 RE= 2.00E-01
+ TF= 6.05E-10 TR= 0.00E+00 VAF= 5.90E+01 VAR= 1.74E+01
+ VJC= 3.00E-01 VJE= 8.00E-01 VJS= 7.50E-01 VTF= 4.39E+00
+ XCJC= 1.00E+00 XTB= 0.00E+00 XTF= 5.81E+00 XTI= 1.50E+00)
*****************************************************************
* internal parallel resistance Rint= 6.5 kOhm
* Rb= 75 kOhm
*****************************************************************
Application Note
2
2000-07-27




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