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PDF BCR3KM-14 Data sheet ( Hoja de datos )
| Número de pieza | BCR3KM-14 | |
| Descripción | LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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BCR3KM-14
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
V Measurement point of
case temperature
q IT (RMS) .................................................................. 3A
q VDRM ................................................................. 700V
q IFGT !, IRGT ! , IRGT # ..................................... 30mA
q Viso .................................................................. 2000V
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
TO-220FN
APPLICATION
Contactless AC switches, light dimmer, electric blankets, control of household equipment
such as electric fan, solenoid drivers, small motor control, other general purpose control
applications
MAXIMUM RATINGS
Symbol
V DRM
V DSM
Parameter
Repetitive peak off-state voltageV1
Non-repetitive peak off-state voltageV1
Voltage class
14
700
840
Unit
V
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BCR3KM-14.PDF ] | |
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