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PDF BCR3KM Data sheet ( Hoja de datos )
| Número de pieza | BCR3KM | |
| Descripción | LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCR3KM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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BCR3KM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
V Measurement point of
case temperature
q IT (RMS) .................................................................. 3A
q VDRM ...................................................... 400V / 600V
q IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) V2
q UL Recognized : File No. E80271
APPLICATION
Control of heater such as electric rice cooker, electric pot
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
TO-220FN
MAXIMUM RATINGS
Symbol
V DRM
V DSM
Parameter
Repetitive peak off-state voltageV1
Non-repetitive peak off-state voltageV1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999
1 page  
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
TYPICAL EXAMPLE
7 IRGT III
5
4 IRGT I
3
IFGT I
2
102
7
5
4
3
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
140
120
I QUADRANT
100
80
III QUADRANT
60
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A 6V A
RG RG
VV
TEST PROCEDURE
6Ω
TEST PROCEDURE
6V A
RG
V
TEST PROCEDURE
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR3KM.PDF ] | |
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