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BCR3AS 반도체 회로 부품 판매점

LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
BCR3AS 데이터시트, 핀배열, 회로
BCR3AS
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
TYPE
NAME
6.5
5.0±0.2
4
VOLTAGE
CLASS
0.5±0.1
• IT (RMS) ........................................................................ 3A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 15mA (10mA) V2
0.9 MAX
1.0
2.3 2.3
0.5±0.2
0.8
Measurement point of
case temperature
123
24
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1 4 T2 TERMINAL
MP-3
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +125
–40 ~ +125
0.26
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999


BCR3AS 데이터시트, 핀배열, 회로
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
Tj=125°C, VDRM applied
On-state voltage
Tc=25°C, ITM=4.5A, Instantaneous measurement
!
Gate trigger voltage V2
@ Tj=25°C, VD=6V, RL=6, RG=330
#
Gate trigger current V2
!
@ Tj=25°C, VD=6V, RL=6, RG=330
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VD=1/2VDRM
Junction to case V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. High sensitivity (IGT10mA) is also available.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. Case temperature is measured on the T2 terminal.
Voltage
class
VDRM
(V)
(dv/dt) c
Min. Unit
Test conditions
8 400
12 600
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
5
V/µs
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
Limits
Min. Typ. Max.
Unit
— — 2.0 mA
— — 1.7
V
— — 1.5
V
— — 1.5
V
— — 1.5
V
— — 15 V2 mA
— — 15 V2 mA
— — 15 V2 mA
0.2 — —
V
— — 3.8 °C/ W
V3 — — V/µs
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
102
7 TC = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
012345
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
40
35
30
25
20
15
10
5
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999




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