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PDF BCR3AM Data sheet ( Hoja de datos )
| Número de pieza | BCR3AM | |
| Descripción | LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCR3AM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AM
OUTLINE DRAWING
10 MAX
4
φ3.2±0.1
TYPE NAME
VOLTAGE
CLASS
∗
Dimensions
in mm
0.5
• IT (RMS) ........................................................................ 3A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (15mA) V6
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control, other general
purpose control applications
1.2±0.1
0.8
0.8
2.5 2.5
123
1.5 MIN
0.5
∗ Measurement point of
case temperature
10 MAX
2 4 1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
1 3 4 T2 TERMINAL
TO-202
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=86°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
1.6
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
160
TYPICAL EXAMPLE
Tj = 125°C
140
120
100
80
60
40 III QUADRANT
20
I QUADRANT
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7 TYPICAL EXAMPLE
5 IRGT III
4
3 IRGT I
2 IFGT I
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
COMMUTATION CHARACTERISTICS
102 VOLTAGE WAVEFORM
7t
5
4
(dv/dt)C
VD
3
2
CURRENT WAVEFORM
IT (di/dt)C
τt
101
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
7
5
4
3
MINIMUM
2 CHARAC-
TERISTICS
100 VALUE
100 2 3 4 5 7 101
I QUADRANT
III QUADRANT
2 3 4 5 7 102
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
6V A
6V A
V RG
V RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6V A
V RG
TEST PROCEDURE 3
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet BCR3AM.PDF ] | |
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