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Mitsubishi Electric Semiconductor |
BCR3KM-14
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
V Measurement point of
case temperature
q IT (RMS) .................................................................. 3A
q VDRM ................................................................. 700V
q IFGT !, IRGT ! , IRGT # ..................................... 30mA
q Viso .................................................................. 2000V
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
TO-220FN
APPLICATION
Contactless AC switches, light dimmer, electric blankets, control of household equipment
such as electric fan, solenoid drivers, small motor control, other general purpose control
applications
MAXIMUM RATINGS
Symbol
V DRM
V DSM
Parameter
Repetitive peak off-state voltageV1
Non-repetitive peak off-state voltageV1
Voltage class
14
700
840
Unit
V
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
V TM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage
@
#
!
Gate trigger current
@
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case V3
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Limits
Min. Typ. Max.
— — 2.0
— — 1.6
— — 1.5
— — 1.5
— — 1.5
— — 30
— — 30
— — 30
0.2 — —
— — 4.0
V2 — —
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Voltage
class
VDRM
(V)
Symbol
(dv/dt)c
Min.
14 700
R
L
—
5
Unit
V/µs
Test conditions
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state
commutating current
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
102
7 TC = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
40
35
30
25
20
15
10
5
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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