파트넘버.co.kr BCR3 데이터시트 PDF


BCR3 반도체 회로 부품 판매점

LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
BCR3 데이터시트, 핀배열, 회로
BCR3KM-14
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
ŒŽ
V Measurement point of
case temperature
q IT (RMS) .................................................................. 3A
q VDRM ................................................................. 700V
q IFGT !, IRGT ! , IRGT # ..................................... 30mA
q Viso .................................................................. 2000V

ΠT1 TERMINAL
 T2 TERMINAL
Ž Ž GATE TERMINAL
Œ
TO-220FN
APPLICATION
Contactless AC switches, light dimmer, electric blankets, control of household equipment
such as electric fan, solenoid drivers, small motor control, other general purpose control
applications
MAXIMUM RATINGS
Symbol
V DRM
V DSM
Parameter
Repetitive peak off-state voltageV1
Non-repetitive peak off-state voltageV1
Voltage class
14
700
840
Unit
V
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Feb.1999


BCR3 데이터시트, 핀배열, 회로
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3KM-14
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
V TM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Repetitive peak off-state current
On-state voltage
!
Gate trigger voltage
@
#
!
Gate trigger current
@
#
Gate non-trigger voltage
Thermal resistance
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6, RG=330
Tj=25°C, VD=6V, RL=6, RG=330
Tj=125°C, VD=1/2VDRM
Junction to case V3
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Limits
Min. Typ. Max.
— — 2.0
— — 1.6
— — 1.5
— — 1.5
— — 1.5
— — 30
— — 30
— — 30
0.2 — —
— — 4.0
V2 — —
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Voltage
class
VDRM
(V)
Symbol
(dv/dt)c
Min.
14 700
R
L
5
Unit
V/µs
Test conditions
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state
commutating current
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
Commutating voltage and current waveforms
(inductive load)
SUPPLY
VOLTAGE
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(dv/dt)c
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE
CHARACTERISTICS
102
7 TC = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE
CURRENT
40
35
30
25
20
15
10
5
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999




PDF 파일 내의 페이지 : 총 2 페이지

제조업체: Mitsubishi Electric Semiconductor

( mitsubishi )

BCR3 data

데이터시트 다운로드
:

[ BCR3.PDF ]

[ BCR3 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


BCR08AM

LOW POWER USE PLANAR PASSIVATION TYPE - RENESAS



BCR08AM-12

Triac Low Power Use - Renesas Technology



BCR08AM-14

LOW POWER USE PLANAR PASSIVATION TYPE - Mitsubishi Electric Semiconductor



BCR08AM-14A

Triac Low Power Use - Renesas Technology



BCR08AS

TRIAC - Powerex Power Semiconductors



BCR08AS

TRIAC - Mitsubishi



BCR08AS-12

TRIAC - Renesas Technology



BCR08AS-8

TRIAC - Mitsubishi Electric Semiconductor



BCR08AS-8

TRIAC - Powerex Power Semiconductors