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Mitsubishi Electric Semiconductor |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20A, BCR20B, BCR20C, BCR20E
OUTLINE DRAWING
Dimensions
in mm
φ2.0 MIN
3
1
1
3
2
φ8.7 MAX
• IT (RMS) ...................................................................... 20A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
φ11 MAX
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
BCR20A
APPLICATION
Contactless AC switches, light dimmer,
on/off control of traffic signals, on/off control of copier lamps, microwave ovens,
solid state relay
2
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 500
600 700
Unit
V
V
Symbol
Parameter
IT (RMS)
RMS on-state current
ITSM
I2t
Surge on-state current
I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
Tstg Storage temperature
V1. Gate open.
Conditions
Commercial frequency, sine full
wave, 360° conduction
BCR20A, B, C
BCR20E
Tc=98°C
Tb=64°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
20
220
203
5.0
0.5
10
2.0
–20 ~ +125
–20 ~ +125
Unit
A
A
A2s
W
W
V
A
°C
°C
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
Parameter
— Weight (Typical value)
—
—
Viso
Soldering temperature
Mounting torque
Isolated voltage
BCR20A
BCR20B
BCR20C
BCR20E
BCR20A only, 10 sec.
Conditions
BCR20C only
BCR20E only, Ta=25°C, AC 1 minute, T2 terminal to base
Ratings
3.5
9.0
9.0
11
230
30
2.94
1500
Unit
g
°C
kg·cm
N·m
V
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM On-state voltage
Tc=25°C, Tb=25°C (BCR20E only), ITM=30A, Instantaneous
measurement
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-b)
Gate trigger voltage V2
Gate trigger current V2
Gate non-trigger voltage
Thermal resistance
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Tj=125°C, VD=1/2VDRM
Junction to case (BCR20A, BCR20B, BCR20C)
Junction to base (BCR20E)
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Limits
Min. Typ. Max.
— — 3.0
— — 1.5
— — 1.5
— — 1.5
— — 1.5
— — 30
— — 30
— — 30
0.2 —
—
— — 1.1
— — 2.4
V3 — —
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R—
L 10
R—
10 600
L
10
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–10A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
Feb.1999
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