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BCR16HM 반도체 회로 부품 판매점

MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE



Mitsubishi Electric Semiconductor 로고
Mitsubishi Electric Semiconductor
BCR16HM 데이터시트, 핀배열, 회로
BCR16HM
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
2
5.0 MIN
39.2 MAX
20.2 MAX
Dimensions
in mm
2-φ4.2
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
• Viso ........................................................................ 2200V
• UL Recognized: File No. E80276
1
φ2.0(T1,T2)
3
20.1 MAX
2
21.6 MAX
30.0±0.2
7.0 7.0
8.25
6.35
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
φ1.55(G)
T1 TERMINAL
INDICATION
1.5
GATE
TERMINAL
INDICATION
TRADEMARK
3-φ1.3
TYPE
NAME
LOT No.
VOLTAGE
CLASS
Tb TEST POINT
BCR16HM (C TYPE)
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 12
400 600
500 720
Unit
V
V
Symbol
Parameter
IT (RMS)
RMS on-state current
ITSM
I2t
Surge on-state current
I2t for fusing
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
— Mounting torque
— Weight
Viso Isolation voltage
V1. Gate open.
Conditions
Commercial frequency, sine full wave, 360° conduction,
Tb=82°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Screw M4
Ta=25°C, AC 1 minute, T2 · T1 · G terminal to base
Ratings
16
170
121
5
0.5
10
2
–40 ~ +125
–40 ~ +125
15
1.47
26
2200
Unit
A
A
A2s
W
W
V
A
°C
°C
kg·cm
N·m
g
V
Feb.1999


BCR16HM 데이터시트, 핀배열, 회로
MITSUBISHI SEMICONDUCTOR TRIAC
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-b)
Repetitive peak off-state current
On-state voltage
Gate trigger voltage V2
Gate trigger current V2
Gate non-trigger voltage
Thermal resistance
!
@
#
!
@
#
Tj=125°C, VDRM applied
Tb=25°C, ITM=25A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6, RG=330
Tj=25°C, VD=6V, RL=6, RG=330
Tj=125°C, VD=1/2VDRM
Junction to base V4
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
V4. The contact thermal resistance Rth (b-f) in case of greasing is 0.5°C/W.
Limits
Min. Typ. Max.
— — 3.0
— — 1.6
— — 1.5
— — 1.5
— — 1.5
— — 30
— — 30
— — 30
0.2 —
— — 2.0
V3 — —
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/ W
V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R—
L 10
R—
12 600
L 10
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–8A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
103
7 Tb = 25°C
5
3
2
102
7
5
3
2
101
7
5
3
2
100
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999




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BCR16HM

MEDIUM POWER USE INSULATED TYPE/ GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor