BCR16C 반도체 회로 부품 판매점
MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE
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 Mitsubishi Electric Semiconductor |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16A, BCR16B, BCR16C, BCR16E
OUTLINE DRAWING
Dimensions
in mm
3
φ2.0 MIN
1
φ2.0 MIN
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/500V
• IFGT !, IRGT !, IRGT # ........................................... 30mA
1
3
2
2
φ8.7 MAX
φ11.1 MAX
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
BCR16A
APPLICATION
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,
on/off control of traffic signals, on/off control of copier lamps,
solid state relay, microwave ovens
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage V1
Non-repetitive peak off-state voltage V1
Voltage class
8 10
400 500
600 700
Unit
V
V
Symbol
Parameter
IT (RMS)
RMS on-state current
ITSM
Surge on-state current
I2t I2t for fusing
PGM Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM Peak gate voltage
IGM Peak gate current
Tj Junction temperature
V1. Gate open.
Conditions
Commercial frequency, sine full
wave, 360° conduction
BCR16A, B, C
BCR16E
Tc=99°C
Tb=71°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ratings
16
170
121
5
0.5
10
2
–20 ~ +125
Unit
A
A
A2s
W
W
V
A
°C
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol
T stg
Parameter
Storage temperature
— Weight (Typical value)
—
—
Viso
Soldering temperature
Mounting torque
Isolated voltage
Test conditions
BCR16A
BCR16B
BCR16C
BCR16E
BCR16A only, 10 sec.
BCR16C only (Typical value)
BCR16E only, Ta=25°C, AC 1 minute, T2 Terminal to base
Ratings
–20 ~ +125
3.0
8.5
8.5
9.5
230
30
2.94
1500
Unit
°C
g
°C
kg·cm
N·m
V
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM On-state voltage
Tc=25°C, Tb=25°C (BCR16E only), ITM=25A , Instantaneous
measurement
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-b)
Gate trigger voltage V2
Gate trigger current V2
Gate non-trigger voltage
Thermal resistance
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
@ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
#
Tj=125°C, VD=1/2VDRM
Junction to case (BCR16A, BCR16B, BCR16C)
Junction to base (BCR16E)
(dv/dt)c
Critical-rate of rise of off-state
commutating voltage
V2. Measurement using the gate trigger characteristics measurement circuit.
V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Limits
Min. Typ. Max.
— — 3.0
— — 1.6
— — 1.5
— — 1.5
— — 1.5
— — 30
— — 30
— — 30
0.2 —
—
— — 1.2
— — 2.5
V3 — —
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
Voltage
class
8
VDRM
(V)
400
(dv/dt) c
Symbol
Min.
R—
L 10
R—
10 500
L 10
Commutating voltage and current waveforms
Test conditions
Unit
(inductive load)
V/µs
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutat-
ing current
(di/dt)c=–8A/ms
3. Peak off-state voltage
VD=400V
SUPPLY
VOLTAGE
MAIN CURRENT
MAIN
VOLTAGE
(dv/dt)c
TIME
(di/dt)c
TIME
TIME
VD
Feb.1999
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제조업체: Mitsubishi Electric Semiconductor
( mitsubishi )
BCR16C data
데이터시트 다운로드 :
[ BCR16C.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
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