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BDW93C 반도체 회로 부품 판매점

NPN SILICON POWER DARLINGTONS



Power Innovations Limited 로고
Power Innovations Limited
BDW93C 데이터시트, 핀배열, 회로
Copyright © 1997, Power Innovations Limited, UK
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
q 80 W at 25°C Case Temperature
q 12 A Continuous Collector Current
q Minimum hFE of 750 at 3 V, 5 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
Tj
Tstg
TA
VALUE
45
60
80
100
45
60
80
100
5
12
0.3
80
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1


BDW93C 데이터시트, 핀배열, 회로
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
SEPTEMBER 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BDW93
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 100 mA
IB = 0
(see Note 3)
BDW93A
BDW93B
60
80
BDW93C
100
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
Emitter cut-off
current
VCB = 40 V
VCB = 60 V
VCB = 80 V
VCB = 80 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VEB = 5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
BDW93
BDW93A
BDW93B
BDW93C
1
1
1
1
0.1
0.1
0.1
0.1
5
5
5
5
2
Forward current
hFE transfer ratio
VCE(sat)
VBE(sat)
VEC
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
VCE = 3 V
VCE = 3 V
VCE = 3 V
IB = 20 mA
IB = 100 mA
IB = 20 mA
IB = 100 mA
IE = 5 A
IE = 10 A
IC = 3 A
IC = 10 A
IC = 5 A
IC = 5 A
IC = 10 A
IC = 5 A
IC = 10 A
IB = 0
IB = 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
1000
100
750
20000
2
3
2.5
4
2
4
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.56 °C/W
62.5 °C/W
PRODUCT INFORMATION
2




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