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Power Innovations Limited |
Copyright © 1997, Power Innovations Limited, UK
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
q Designed for Complementary Use with
BDW53, BDW53A, BDW53B, BDW53C and
BDW53D
q 40 W at 25°C Case Temperature
q 4 A Continuous Collector Current
q Minimum hFE of 750 at 3 V, 1.5 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0) (see Note 1)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
½LIC2
Tj
Tstg
TA
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-4
-50
40
2
25
-65 to +150
-65 to +150
-65 to +150
V
V
V
A
mA
W
W
mJ
°C
°C
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
BDW54, BDW54A, BDW54B, BDW54C, BDW54D
PNP SILICON POWER DARLINGTONS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
IC = -30 mA IB = 0
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VEB = -5 V
VCE = -3 V
VCE = -3 V
VCE = -3 V
IB = -30 mA
IB = -40 mA
IE = -4 A
IB = 0
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
IC = -1.5 A
IC = -4 A
IC = -1.5 A
IC = -1.5 A
IC = -4 A
IB = 0
(see Note 5)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
BDW54
BDW54A
BDW54B
BDW54C
BDW54D
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
-45
-60
-80
-100
-120
750
100
-0.5
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-0.2
-5
-5
-5
-5
-5
-2
20000
-2.5
-2.5
-4
-3.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff Turn-off time
IC = -2 A
VBE(off) = 5 V
IB(on) = -8 mA
RL = 15 Ω
IB(off) = 8 mA
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1 µs
4.5 µs
PRODUCT INFORMATION
2
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