|
Motorola Inc |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Silicon Plastic
Power Darlingtons
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain
HFE = 1000 (min.) @ 5 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction with Built–in Base Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Value
100
100
5.0
10
20
0.5
125
1.0
– 65 to + 150
Symbol
θJC
Max
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
Order this document
by BDV65B/D
BDNVP6N5B
BDPVN6P4B
DARLINGTONS
10 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 – 80 – 100 – 120 VOLTS
125 WATTS
CASE 340D–01
SOT 93, TO–218 TYPE
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBEÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOODLCCCCEDCBFNVEFmaooooCo((((((((CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎslllllCIVVVVIIIllllli6CCCCCeeeeetCeHCCCBtTHccccce–5uA====EEBBtttttRrEArÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎoooooBRrC3555m=rrrrrI===eRA––C0...unCCC000iA5EE515BtCtAttmuuuÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎo.000eAAACmm0GTtttDfL0rAooofdddTVVEiiaVttSfffCdcccVEVttfffCddRieed,,,ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎncauCCCcdcRrrcIH,VIV6tr,,SBcuuuu,ISSrICCSII,ABe4TrrrrIBE=uaCarrrIEEÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTnIEReeeB=stCt==tIu0innn=tC==oAS=ar0.ttt00n0aSi0)44CnÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0),2t)V..ii)To00TnoAnCgElVVdtÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎaVRVcdd=go)occI1el))lStt5aaÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎT0ggI_eeCCC(ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSh)1a)raÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎcterÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎisticÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎVVVCSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCBIIIIEyCCChEEmEOFBEBB((E(bsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOoOOOsaonutl)s))ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1M10——————0i0ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎn00 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM102522——......a040005xÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎmmmmUVVVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗAAAAndddddddiccctccccÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2 Motorola Bipolar Power Transistor Device Data
|