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BDT60 반도체 회로 부품 판매점

PNP SILICON POWER DARLINGTONS



Power Innovations Limited 로고
Power Innovations Limited
BDT60 데이터시트, 핀배열, 회로
Copyright © 1997, Power Innovations Limited, UK
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
q Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
q 50 W at 25°C Case Temperature
q 4 A Continuous Collector Current
q Minimum hFE of 750 at 1.5 V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B1
C2
E3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (IE = 0)
RATING
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
Tj
Tstg
TA
VALUE
-60
-80
-100
-120
-60
-80
-100
-120
-5
-4
-0.1
50
2
-65 to +150
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
W
W
°C
°C
°C
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1


BDT60 데이터시트, 핀배열, 회로
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
ICEO
Collector-emitter
cut-off current
ICBO
Collector cut-off
current
IEBO
hFE
VCE(sat)
VBE(on)
VEC
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IC = -30 mA IB = 0
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -30 V
VCB = -40 V
VCB = -50 V
VCB = -60 V
VEB = -5 V
IB = 0
IB = 0
IB = 0
IB = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IC = 0
(see Note 3)
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
VCE = -3 V IC = -1.5 A (see Notes 3 and 4)
IB = -6 mA IC = -1.5 A (see Notes 3 and 4)
VCE = -3 V IC = -1.5 A (see Notes 3 and 4)
IE = -1.5 A IB = 0
-60
-80
-100
-120
750
-0.5
-0.5
-0.5
-0.5
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
-5
-2.5
-2.5
-2.0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.5 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
ton Turn-on time
toff Turn-off time
IC = -2 A
VBE(off) = 5 V
IB(on) = -8 mA
RL = 20
IB(off) = 8 mA
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
1 µs
4.5 µs
PRODUCT INFORMATION
2




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