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Seme LAB |
SEME
LAB
MECHANICAL DATA
Dimensions in mm
10.6
4.6
0.8
3.6
Dia.
1 23
2.54
BSC
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
2
1.0
2.70
BSC
3 .6 0 (0 .1 4 2 )
M ax.
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
TO220M
SMD1
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
- TO220 Metal Package - Isolated
- Ceramic Surface Mount Package
Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCBO
Collector - Base voltage (IE = 0)
VCEO
Collector - Emitter voltage (IB = 0)
VEBO
Emitter - Base voltage (IC = 0)
IE , IC
Emitter , Collector current
IB Base current
Ptot Total power dissipation at Tcase £ 75°C
Tstg Storage Temperature
Tj Junction Temperature
BDS13 BDS14 BDS15
–60V
–80V –100V
–60V
–80V –100V
–5V
–15A
–5A
90W
–65 TO 200°C
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
PRELIM. 7/00
SEME
LAB
BDS13 BDS13SMD
BDS14 BDS14SMD
BDS15 BDS15SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
Parameter
Test Conditions
Collector cut-off current
(IE = 0)
BDS13
BDS14
BDS15
VCB = –60V
VCB = –80V
VCB = –100V
Collector cut-off current
(IB = 0)
BDS13
BDS14
BDS15
VCE = –30V
VCE = –40V
VCE = –50V
Emitter cut-off current
(IC = 0)
VEB = –5V
BDS13
Collector - Emitter
BDS14
sustaining voltage (IB = 0) BDS15
IC = –100mA
Min.
–60
–80
–100
Typ.
VCE(sat)*
VBE(sat)*
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
IC = –5A IB = –0.5A
IC = –10A IB = –2.5A
IC = –10A IB = –2.5A
VBE*
Base - Emitter voltage IC = –5A VCE = –4V
IC = –0.5A VCE = –4V
hFE* DC Current gain
IC = –5A VCE = –4V
IC = –10A VCE = –4V
fT
Transition frequency
IC = –0.5A VCE = –4V
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
40
15
5
3
Max.
–500
–500
–500
–1
–1
–1
Unit
mA
mA
–1 mA
V
–1
–3
–2.5
–1.5
250
150
V
V
V
MHz
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts Storage Time
tr Fall Time
Test Conditions
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = –IB2 = 0.4A
Max.
0.7
1.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
RTHcase-sink Thermal resistance case - heatsink **
RTHj-a
Thermal resistance junction - ambient
** Smooth flat surface using thermal grease.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Max. 1.4°C/W
Typ. 1.0°C/W
Max. 80°C/W
PRELIM. 7/00
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