파트넘버.co.kr BDS10 데이터시트 PDF


BDS10 반도체 회로 부품 판매점

SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES



Seme LAB 로고
Seme LAB
BDS10 데이터시트, 핀배열, 회로
SEME
LAB
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
MECHANICAL DATA
Dimensions in mm
10.6
4.6
0.8
3.6
Dia.
1 23
2.54
BSC
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
1.0
2.70
BSC
3 .6 0 (0 .1 4 2 )
M ax.
SILICON NPN
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
2 • POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
TO220M - TO220 Metal Package - Isolated
SMD1 - Ceramic Surface Mount Package
Pin 1 Base
Pin 2 Collector
Pin 3 Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCBO
Collector - Base voltage (IE = 0)
VCEO
Collector - Emitter voltage (IB = 0)
VEBO
Emitter - Base voltage (IC = 0)
IE , IC
Emitter , Collector current
IB Base current
Ptot Total power dissipation at Tcase £ 75°C
Tstg Storage Temperature
Tj Junction Temperature
BDS10 BDS11 BDS12
60V 80V 100V
60V 80V 100V
5V
15A
5A
90W
–65 to 200°C
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 7/00


BDS10 데이터시트, 핀배열, 회로
SEME
LAB
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
Parameter
Test Conditions
Collector cut-off current
(IE = 0)
BDS10
BDS11
BDS12
VCB = 60V
VCB = 80V
VCB = 100V
Collector cut-off current
(IB = 0)
BDS10
BDS11
BDS12
VCE = 30V
VCE = 40V
VCE = 50V
Emitter cut-off current
(IC = 0)
VEB = 5V
BDS10
Collector - Emitter
BDS11
sustaining voltage (IB = 0) BDS12
IC = 100mA
Min.
60
80
100
Typ.
VCE(sat)*
VBE(sat)*
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
IC = 5A
IC = 10A
IC = 10A
IB = 0.5A
IB = 2.5A
IB = 2.5A
VBE*
Base - Emitter voltage IC = 5A VCE = 4V
IC = 0.5A VCE = 4V
hFE* DC Current gain
IC = 5A VCE = 4V
IC = 10A VCE = 4V
fT
Transition frequency
IC = 0.5A VCE = 4V
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
40
15
5
3
Max.
500
500
500
1
1
1
Unit
mA
mA
1 mA
V
1
V
3
2.5 V
1.5 V
250
150
MHz
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts Storage Time
tr Fall Time
Test Conditions
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = IB2 = 0.4A
Max.
0.7
1.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
RTHcase-sink Thermal resistance case - heatsink **
RTHj-a
Thermal resistance junction - ambient
** Smooth flat surface using thermal grease.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Max. 1.4°C/W
Typ. 1.0°C/W
Max. 80°C/W
Prelim. 7/00




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BDS10 data

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