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Seme LAB |
SEME
LAB
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
MECHANICAL DATA
Dimensions in mm
10.6
4.6
0.8
3.6
Dia.
1 23
2.54
BSC
0 .8 9
(0 .0 3 5 )
3 .7 0 ( 0 .1 4 6 ) m in . 3 .7 0 ( 0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
13
1.0
2.70
BSC
3 .6 0 (0 .1 4 2 )
M ax.
SILICON NPN
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
• FULLY ISOLATED (METAL VERSION)
APPLICATIONS
2 • POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
9 .6 7 (0 .3 8 1 )
9 .3 8 (0 .3 6 9 )
1 1 .5 8 (0 .4 5 6 )
1 1 .2 8 (0 .4 4 4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
TO220M - TO220 Metal Package - Isolated
SMD1 - Ceramic Surface Mount Package
Pin 1 – Base
Pin 2 – Collector
Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCBO
Collector - Base voltage (IE = 0)
VCEO
Collector - Emitter voltage (IB = 0)
VEBO
Emitter - Base voltage (IC = 0)
IE , IC
Emitter , Collector current
IB Base current
Ptot Total power dissipation at Tcase £ 75°C
Tstg Storage Temperature
Tj Junction Temperature
BDS10 BDS11 BDS12
60V 80V 100V
60V 80V 100V
5V
15A
5A
90W
–65 to 200°C
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Prelim. 7/00
SEME
LAB
BDS10 BDS10SMD
BDS11 BDS11SMD
BDS12 BDS12SMD
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
ICBO
ICEO
IEBO
VCEO(sus)*
Parameter
Test Conditions
Collector cut-off current
(IE = 0)
BDS10
BDS11
BDS12
VCB = 60V
VCB = 80V
VCB = 100V
Collector cut-off current
(IB = 0)
BDS10
BDS11
BDS12
VCE = 30V
VCE = 40V
VCE = 50V
Emitter cut-off current
(IC = 0)
VEB = 5V
BDS10
Collector - Emitter
BDS11
sustaining voltage (IB = 0) BDS12
IC = 100mA
Min.
60
80
100
Typ.
VCE(sat)*
VBE(sat)*
Collector - Emitter
saturation voltage
Base - Emitter
saturation voltage
IC = 5A
IC = 10A
IC = 10A
IB = 0.5A
IB = 2.5A
IB = 2.5A
VBE*
Base - Emitter voltage IC = 5A VCE = 4V
IC = 0.5A VCE = 4V
hFE* DC Current gain
IC = 5A VCE = 4V
IC = 10A VCE = 4V
fT
Transition frequency
IC = 0.5A VCE = 4V
*Pulsed : Pulse duration = 300 ms , duty cycle = 1.5%
40
15
5
3
Max.
500
500
500
1
1
1
Unit
mA
mA
1 mA
V
1
V
3
2.5 V
1.5 V
250
150
MHz
SWITCHING CHARACTERISTICS
Parameter
ton
On Time
(td + tr)
ts Storage Time
tr Fall Time
Test Conditions
IC = 4A VCC = 30V IB1 = 0.4A
IC = 4A VCC = 30V
IB1 = –IB2 = 0.4A
Max.
0.7
1.0
0.8
Unit
ms
ms
ms
THERMAL DATA
RTHj-case
Thermal resistance junction - case
RTHcase-sink Thermal resistance case - heatsink **
RTHj-a
Thermal resistance junction - ambient
** Smooth flat surface using thermal grease.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Max. 1.4°C/W
Typ. 1.0°C/W
Max. 80°C/W
Prelim. 7/00
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