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BD682 반도체 회로 부품 판매점

Plastic Medium-Power Silicon PNP Darlingtons



Motorola  Inc 로고
Motorola Inc
BD682 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD676/D
Plastic Medium-Power
Silicon PNP Darlingtons
. . . for use as output devices in complementary general–purpose amplifier applica-
tions.
High DC Current Gain —
hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc
Monolithic Construction
BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,
677, 677A, 679, 679A, 681
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATING
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
BD676 BD678 BD680
Symbol BD676A BD678A BD680A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
VCEO
45
60
80
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
VCB
VEB
45
60 80
5.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
IC
4.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
0.1
40
0.32
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction TJ, Tstg
Temperating Range
– 55 to + 150
BD682
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
θJC
Max Unit
3.13 _C/W
50
45
40
35
30
25
20
15
10
5.0
0
15
30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
165
BD676
BD676A
BD678
BD678A
BD680
BD680A
BD682
4.0 AMPERE
DARLINGTON
POWER TRANSISTORS
PNP SILICON
45, 60, 80, 100 VOLTS
40 WATTS
CASE 77–08
TO–225AA TYPE
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1


BD682 데이터시트, 핀배열, 회로
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBD676 BD676A BD678 BD678A BD680 BD680A BD682
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Breakdown Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 50 mAdc, IB = 0)
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BVCEO
45
60
80
100
— Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO. IE = 0, TC = 100°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, VCE = 3.0 Vdc)
Collector–Emitter Saturation Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, IB = 30 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 2.0 Adc, IB = 40 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.5 Adc, VCE = 3.0 Vdc)
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD676, 678, 680, 682
BD676A, 678A, 680A
BD678, 680, 682
BD676A, 678A, 680A
BD678, 680, 682
BD676A, 678A, 680A
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
750
750
500 µAdc
mAdc
0.2
2.0
2.0 mAdc
2.5 Vdc
2.8
Vdc
2.5
2.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv v(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
hfe 1.0 — —
5.0
2.0
1.0
BONDING WIRE LIMIT
0.5 THERMAL LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
0.05
1.0
TC = 25°C
BD676, 676A
BD678, 678A
BD680, 680A
BD682
2.0 5.0 10 20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BASE
There are two limitations on the power handling ability of a
transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
100
COLLECTOR
[ [8.0 k 120
EMITTER
Figure 3. Darlington Circuit Schematic
2 Motorola Bipolar Power Transistor Device Data




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