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PDF AO3402 Data sheet ( Hoja de datos )
| Número de pieza | AO3402 | |
| Descripción | N-Channel Power MOSFE | |
| Fabricantes | TOPSKY | |
| Logotipo |  |
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N-Channel Power MOSFE
Production specification
AO3402
DESCRIPTION
The AO3402 is the N-Channel logic
enhancement mode power field effect
transistor is produced using high cell
density, DMOS trench technology. This
hight-density process is especially
tailored tominimize on-state resistance.
These devices are particularly suited for
low voltage application such as cellular
phone and notebook computer power
management and other battery powered
circuits where high side switching .
PIN CONFIGURATION SOT-23-3
3
D
GS
12
1.Gate 2.Source 3.Drain
FEATURE
30V/5.8A, RDS(ON) = 28mΩ (Typ.)
@VGS = 10V
30V/5.0A, RDS(ON) = 33mΩ
@VGS = 4.5V
30V/4.0A, RDS(ON) = 52mΩ
@VGS = 2.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3 package design
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS 12
Continuous Drain Current
ID 5.8
Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC
TA = 75oC
IDM
PD
30
1.4
1
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
Junction-to-Ambient Thermal Resistance (PCB mounted)
RθJA
145
Unit
V
A
W
oC
oC/W
SHENZHEN TOPSKY TECHNOLOGY CO.,LTD
www.szct.com.cn
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO3402.PDF ] | |
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