파트넘버.co.kr MCR100-8G 데이터시트 PDF


MCR100-8G 반도체 회로 부품 판매점

SCRs



First Semiconductor 로고
First Semiconductor
MCR100-8G 데이터시트, 핀배열, 회로
MCR100-8G
SCRs
Description
Glass passivated, sensitive gate thyristors in a plastic envelope,
intended for use in general purpose switching and phase control
applications. These devices are intended to be interfaced directly
to microcontrollers, logic integrated circuits and other low power
gate trigger circuits.
Features
Blocking voltage to 600 V
On-state RMS current to 0.8 A
Ultra low gate trigger current
Simplified outline
TO-92
123
Symbol
ak
g
Applications
Motor control
Industrial and domestic lighting
Heating
Static switching
Pin
1
2
3
TAB
Description
cathode
anode
gate
anode
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current full sine wave
Non-repetitive peak on-state current
(full cycle,Tj initial=25 )
Value
600
0.8
10
Unit
V
A
A
SYMBOL
R JC
R JA
TL
PARAMETER
Thermal resistance,Junction to Case
Junction to Ambient
Lead Solder Temperature
CONDITIONS
<1/16 from case,10
secs max
MIN
-
-
TYP
-
260
MAX
75
200
-
UNIT
/W
@ 2010 Copyright By American First Semiconductor
Page 1/4


MCR100-8G 데이터시트, 핀배열, 회로
MCR100-8G
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL
V VDRM, RRM
IT(RMS)
PARAMETER
Peak repetitive off-state
Voltages
RMS on-state current 180
CONDITIONS
Tj = -40 to 110 sine wave
50 to 60 Hz gate open
conduction angles
MCR100-6
MCR100-8
Tc =80
MIN
-
-
ITSM
Peak non-repetitive
surge current
1/2cycle,sine
wave,60Hz,Tj=25
-
I2t circuit fusing consideration
t=8.3ms
-
I ,IDRM RRM
Peak repetitive forward
or reverse blocking
current
VD=rated VDRM and V ;RRM
R =GK 1k
Tc =25
Tc =110
-
-
MAX
400
600
0.8
UNIT
V
A
10 A
0.415
A2S
10 A
100 A
IGFM
VGRM
PGM
P G(AV)
Tstg
TJ
Forward peak gate curren
Reverse peak gate voltage
Forward peak gate power
Forward average gate power
Storage temperature range
TA=25 ,Pulse Width<=1.0
TA=25 ,Pulse Width<=1.0
TA=25 ,Pulse Width<=1.0
TA=25 , t=8.3ms
s
s
s
Operating junction temperature range @ rate V aRRM nd VDRM
-1A
-5V
- 0.1 W
- 0.01 W
-40 150
-40 125
TJ =25 C unless otherwise stated
SYMBOL PARAMETER
Static characteristics
CONDITIONS
IGT
Gate trigger current
V =AK 7.0Vdc,RL=100
MIN TYP MAX UNIT
Tc =25
- 40 200 A
IL Latch current
V =AK 7.0V,lg=200 A
Tc =25
Tc =-40
- 0.6 10 mA
- - 15 mA
IH
Holding current
V =AK 7.0Vdc,lnitiating Current=20mA
Tc=25
- 0.5 5.0 mA
Tc=-40
- - 10 mA
VTM
Peak forward on-state voltage
I =TM 1.0A Peak;@TA=25
Gate trigger voltage
V =AK 7.0Vdc,RL=100
VGT Tc=25
Tc=-40
- - 1.7
- 0.62 0.8
- - 1.2
V
V
V
Dynamic Characteristics
dv/dt
Critical rate of rise of
off-state voltage
di/dt
Critical rate-of-rise of
on-state current
VD=Rated V ,DRM Exponential
Waveform,R =GK 1k
Tj=110
I =PK 20A;PW=10 sec;
diG/dt=1A/ sec,lgt=20mA
20 35
- V/ s
- - 50 A/ s
www.First-semi.com
Page 2/4




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: First Semiconductor

( first )

MCR100-8G data

데이터시트 다운로드
:

[ MCR100-8G.PDF ]

[ MCR100-8G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


MCR100-8

Sillicon Controlled Rectifiers - LITE-ON



MCR100-8

Silicon Controlled Rectifier - SemiHow



MCR100-8

PLASTIC SILICON CONTROLLED RECTIFIERS(PNPN devices designed for high volume) - Unisonic Technologies



MCR100-8

Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) - Motorola Semiconductors



MCR100-8

SCR - Semtech



MCR100-8

Sensitive Gate Silicon Controlled Rectifiers - ON Semiconductor



MCR100-8

Standard Gate SCR - DnI



MCR100-8

(MCR100-6/-8) Thyristors - Weitron



MCR100-8

Silicon Planar PNPN Thyristor - WEJ