파트넘버.co.kr SP8J5FRA 데이터시트 PDF


SP8J5FRA 반도체 회로 부품 판매점

4V Drive Pch+Pch MOS FET



ROHM Semiconductor 로고
ROHM Semiconductor
SP8J5FRA 데이터시트, 핀배열, 회로
Transistors
4V Drive Pch+Pch MOS FET
SP8J5 FRA
SP8JS5PF8RJA5
AEC-Q101 Qualified
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (25m: at 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SP8J5 FRA
Taping
TB
2500
zInner circuit
(8) (7) (6)
(5)
2 2
1 1
(1) (2) (3) (4)
zAbsolute maximum ratings (Ta=25qC)
<It is the same ratings for Tr1 and Tr2.>
1 ESD PROTECTION DIODE
2 BODY DIODE
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
1 Pw10μs, Duty cycle1%
2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP 1
IS
ISP 1
PD 2
Tch
Tstg
Limits
30
±20
±7.0
±28
1.6
28
2.0
150
55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board.
Symbol
Rth(ch-a)
Limits
62.5
Unit
°C / W
Rev.A
1/4


SP8J5FRA 데이터시트, 핀배열, 회로
Transistors
zElectrical characteristics (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) 1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS (on)
20 28 mΩ ID= −7A, VGS= −10V
25 35 mΩ ID= −3.5A, VGS= −4.5V
30 42 mΩ ID= −3.5A, VGS= −4.0V
Forward transfer admittance
Yfs 6.0
S VDS= −10V, ID= −3.5A
Input capacitance
Ciss
2600
pF VDS= −10V
Output capacitance
Coss 450 pF VGS=0V
Reverse transfer capacitance Crss
350
Turn-on delay time
td (on) 20
Rise time
tr 50
Turn-off delay time
td (off)
110
Fall time
tf 70
Total gate charge
Qg 25
Gate-source charge
Qgs 5.5
Gate-drain charge
Qgd 10
pF f=1MHz
ns ID= −3.5A
ns VDD 15V
VGS= −10V
ns RL=4.3Ω
ns RG=10Ω
nC VDD 15V
nC VGS= −5V
nC ID= −7A
Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.6A, VGS=0V
SP8JS5PF8RJA5
Rev.A
2/4




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SP8J5FRA

4V Drive Pch+Pch MOS FET - ROHM Semiconductor