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ROHM Semiconductor |
Transistors
4V Drive Pch+Pch MOS FET
SP8J5 FRA
SP8JS5PF8RJA5
AEC-Q101 Qualified
zStructure
Silicon P-channel MOS FET
zFeatures
1) Low On-resistance. (25m: at 4.5V)
2) High Power Package. (PD=2.0W)
3) High speed switching.
4) Low voltage drive. (4V)
zApplications
Power switching, DC-DC converter
zExternal dimensions (Unit : mm)
SOP8
5.0
0.4
1.75
(8) (5)
1pin mark
(1)
1.27
(4)
0.2
Each lead has same dimensions
zPackaging specifications
Type
Package
Code
Basic ordering unit (pieces)
SP8J5 FRA
Taping
TB
2500
zInner circuit
(8) (7) (6)
(5)
∗2 ∗2
∗1 ∗1
(1) (2) (3) (4)
zAbsolute maximum ratings (Ta=25qC)
<It is the same ratings for Tr1 and Tr2.>
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body diode)
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±7.0
±28
−1.6
−28
2.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth(ch-a) ∗
Limits
62.5
Unit
°C / W
Rev.A
1/4
Transistors
zElectrical characteristics (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS − − ±10 μA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS − − −1 μA VDS= −30V, VGS=0V
Gate threshold voltage
VGS (th) −1.0 − −2.5 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
∗
RDS (on)
−
−
−
20 28 mΩ ID= −7A, VGS= −10V
25 35 mΩ ID= −3.5A, VGS= −4.5V
30 42 mΩ ID= −3.5A, VGS= −4.0V
Forward transfer admittance
Yfs ∗ 6.0
−
−
S VDS= −10V, ID= −3.5A
Input capacitance
Ciss
− 2600 −
pF VDS= −10V
Output capacitance
Coss − 450 − pF VGS=0V
Reverse transfer capacitance Crss
− 350 −
Turn-on delay time
td (on) ∗ − 20 −
Rise time
tr ∗ − 50 −
Turn-off delay time
td (off) ∗ −
110
−
Fall time
tf ∗ − 70 −
Total gate charge
Qg ∗ − 25 −
Gate-source charge
Qgs ∗ − 5.5 −
Gate-drain charge
Qgd ∗ − 10 −
pF f=1MHz
ns ID= −3.5A
ns VDD −15V
VGS= −10V
ns RL=4.3Ω
ns RG=10Ω
nC VDD −15V
nC VGS= −5V
nC ID= −7A
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25qC)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Forward voltage
Symbol Min. Typ. Max. Unit
Conditions
VSD − − −1.2 V IS= −1.6A, VGS=0V
SP8JS5PF8RJA5
Rev.A
2/4
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