(PDF) RHU003N03 Datasheet - 4V Drive Nch MOS FET

Número de pieza	RHU003N03
Descripción	4V Drive Nch MOS FET
Fabricantes	ROHM Semiconductor
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No Preview Available ! Transistors 4V Drive Nch MOS FET RHU003N03 RHU003N03 zStructure Silicon N-channel MOS FET zFeatures 1) Low On-resistance. 2) 4V drive. zApplications Switching zPackaging specifications Package Type Code Basic ordering unit (pieces) RHU003N03 Taping T106 3000 zExternal dimensions (Unit : mm) UMT3 2.0 0.3 (3) 0.9 0.2 0.7 (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : MN zInner circuit (3) (2) ∗2 ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Total power dissipation Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended land Symbol VDSS VGSS ID IDP ∗1 PD ∗2 Tch Tstg Limits 30 ±20 ±300 ±1.2 200 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ Each terminal mounted on a recommended land Symbol Rth(ch-a) ∗ Limits 625 Unit V V mA A mW °C °C Unit °C/W 1/2 1 page

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PDF RHU003N03 Data sheet ( Hoja de datos )