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Número de pieza | BD22621G-M | |
Descripción | 0.3A Current Limit High Side Switch ICs | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BD22621G-M (archivo pdf) en la parte inferior de esta página. Total 26 Páginas | ||
No Preview Available ! Datasheet
1 Channel Compact High Side Switch ICs
0.3A Current Limit High Side Switch ICs
BD22621G-M
General Description
BD22621G-M is a low on-resistance N-channel
MOSFET high-side power switch, optimized for
Universal Serial Bus (USB) applications. BD22621G-M
is equipped with the function of over-current detection,
thermal shutdown, under-voltage lockout and soft-start.
Key Specifications
Input Voltage Range:
ON-Resistance:
Over-Current Threshold:
Standby Current:
Operating Temperature Range:
2.7V to 5.5V
120mΩ(Typ)
0.3A(Typ)
0.01μA (Typ)
-40°C to +105°C
Features
AEC-Q100 Qualified(Note1)
Over Current Threshold: 0.3A
Built-in Low ON-Resistance (Typ 120mΩ)
N-Channel MOSFET
Reverse Current Protection when
Power Switch Off
Thermal Shutdown
Under-Voltage Lockout
Open-Drain Error Flag Output
Output Discharge Function
Soft Start Circuit
Control Input Logic : Active-High
(Note1: Grade2)
Package
W(Typ) x D(Typ) x H(Max)
SSOP5
2.90mm x 2.80mm x 1.25mm
Applications
Car accessory, Industrial applications
Typical Application Circuit
5V (Typ)
3.3V
10kΩ to
100kΩ
CIN
IN
GND
EN
OUT
/OC
+
CL
-
Lineup
Over-Current Threshold
Min Typ Max
0.18A
0.3A
0.42A
Control Input
Logic
High
Package
Orderable Part Number
SSOP5
Reel of 3000 BD22621G-MTR
○Product structure:Silicon monolithic integrated circuit
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has not designed protection against radioactive rays
1/23
TSZ02201-0GCG0H300040-1-2
2.Nov.2016 Rev.001
1 page BD22621G-M
Measurement Circuit
V IN
A
1µF
IN
GND
VEN
EN
OUT
/O C
A. Operating Current, Standby Current
V IN
A
1µF
IN
GND
VEN
EN
OUT
RL
/O C
B. EN Input Voltage, Output Rise / Fall Time
V IN
A
1µF
IN
GND
VEN
EN
10kΩ
OUT
IO U T
/O C
V IN
A
1µF
IN
GND
VEN
EN
OUT
/O C
C. ON-Resistance, Over-Current Detection
D. /OC Output Low Voltage
Timing Diagram
Figure 1. Measurement Circuit
I/O C
VEN
VENH
tON2
VOUT
90%
10%
tON1
VENL
tOFF2
90%
10%
tOFF1
Figure 2. Output Rise / Fall Time
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
www.rohm.com
5/23
TSZ02201-0GCG0H300040-1-2
2.Nov.2016 Rev.001
5 Page BD22621G-M
Typical Performance Curves - continued
5.0 5.0
4.0 4.0
3.0
Ta=-40°C
2.0
Ta=25°C
1.0
Ta=105°C
0.0
2
345
Supply Voltage: VIN[V]
Figure 23. Output Fall Time vs Supply
Voltage
6
3.0
VIN=2.7V
2.0 VIN=5.5V
VIN=5V
1.0
0.0
-50
-25 0 25 50 75 100
Ambient Temperature: Ta[°C]
125
Figure 24. Output Fall Time vs
Ambient Temperature
6.0
Ta=-40°C
5.0
Ta=25°C
4.0
3.0
Ta=105°C
2.0
1.0
0.0
2
345
Supply Voltage: VIN[V]
Figure 25. Output Turn-Off Time vs
Supply Voltage
6.0
VIN=5.5V
5.0 VIN=5V
4.0
3.0 VIN=2.7V
2.0
1.0
0.0
6 -50 -25 0 25 50 75 100 125
Ambient Temperature: Ta[°C]
Figure 26. Output Turn-Off Time vs
Ambient Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
www.rohm.com
11/23
TSZ02201-0GCG0H300040-1-2
2.Nov.2016 Rev.001
11 Page |
Páginas | Total 26 Páginas | |
PDF Descargar | [ Datasheet BD22621G-M.PDF ] |
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