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XP131A0616SR 반도체 회로 부품 판매점

Power MOS FET



Torex Semiconductor 로고
Torex Semiconductor
XP131A0616SR 데이터시트, 핀배열, 회로
N-Channel Power MOS FET
DMOS Structure
Low On-State Resistance: 0.016MAX
Ultra High-Speed Switching
SOP-8 Package
Applications
Notebook PCs
Cellular and portable phones
On-board power supplies
Li-ion battery systems
General Description
The XP131A0616SR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
Features
Low on-state resistance: Rds(on)=0.016(Vgs=4.5V)
Rds(on)=0.022(Vgs=2.5V)
Rds(on)=0.045(Vgs=1.5V)
Ultra high-speed switching
Operational Voltage: 1.5V
High density mounting: SOP-8
Pin Configuration
S1
S2
S3
G4
SOP-8
(TOP VIEW)
8D
7D
6D
5D
Equivalent Circuit
18
27
36
45
N-Channel MOS FET
(1 device built-in)
Pin Assignment
PIN
NUMBER
PIN
NAME
1~3 S
4G
5~8 D
FUNCTION
Source
Gate
Drain
u
Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
20 V
±8 V
10 A
30 A
10 A
Continuous Channel
Power Dissipation (note)
Pd
2.5 W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a glass epoxy PCB
150
-55~150
:
:


XP131A0616SR 데이터시트, 핀배열, 회로
Electrical Characteristics
DC characteristics
PARAMETER
Drain Cut-off Current
Gate-Source Leakage Current
Gate-Source Cut-off Voltage
SYMBOL
Idss
Igss
Vgs(off)
Drain-Source On-state
Resistance (note)
Forward Transfer Admittance
(note)
Body Drain Diode
Forward Voltage
Note: Effective during pulse test.
Rds(on)
Yfs
Vf
CONDITIONS
Vds=20V, Vgs=0V
Vgs=±8V, Vds=0V
Id=1mA, Vds=10V
Id=5A, Vgs=4.5V
Id=5A, Vgs=2.5V
Id=1.5A, Vgs=1.5V
Id=5A, Vds=10V
If=10A, Vgs=0V
Ta=25:
MIN
TYP
MAX
UNITS
10 µA
±1 µA
0.5 1.2 V
0.012
0.016
0.016
0.022
0.028
0.045
28 S
0.85 1.1
V
Dynamic characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
u
SYMBOL
Ciss
Coss
Crss
Switching characteristics
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vds=10V, Vgs=0V
f=1MHz
CONDITIONS
Vgs=5V, Id=5A
Vdd=10V
Ta=25:
MIN
TYP
MAX
UNITS
2100
pF
1000
pF
400 pF
Ta=25:
MIN
TYP
MAX
UNITS
15 ns
100 ns
100 ns
20 ns
Thermal characteristics
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Thermal Resistance
(channel-surroundings)
Rth (ch-a)
Implement on a glass epoxy
resin PCB
50
˚C/W




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( torex )

XP131A0616SR data

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XP131A0616SR

Power MOS FET - Torex Semiconductor