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PDF K80E07NE Data sheet ( Hoja de datos )
| Número de pieza | K80E07NE | |
| Descripción | TK80E07NE | |
| Fabricantes | Toshiba | |
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TK80E07NE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H)
TK80E07NE
E-Bike/UPS/Inverter
Unit: mm
Note : This product is designed for E-Bike / UPS / Inverter in China / India market.
z Low drain−source on-resistance
: RDS(ON) = 6.9 mΩ (typ.)
z Low leakage current
: IDSS = 10 µA (max) (VDS = 70 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
DC (Note 1,4)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Peak diode recovery dv/dt (Note 5)
Channel temperature (Note 4)
Storage temperature range (Note 4)
Thermal Characteristics
Symbol
VDSS
VDGR
VGSS
ID
ID
IDP
PD
EAS
IAR
EAR
dv/dt
Tch
Tstg
Rating
70
70
±20
80
58
240
87
16.4
40
8.7
11.5
175
−55~175
Unit
V
V
V
A
A
A
W
mJ
A
mJ
V/ns
°C
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
-
WWeeiigghhtt:: 11..993gg((ttyypp.))
Unit: mm
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth(ch−c)
Rth(ch−a)
1.72
83.3
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 175°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L =14.9µH, RG = 25 Ω, IAR = 40A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Tc = 100°C
Note 5: IDR 80 A,di/dt 160 A/µs, Tch Tch max.,
VDS peak VDSS
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
-
Weight: 1.9 g (typ.)
Note :Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).Thermal Characteristics
1 2013-03-07
1 page  
TK80E07NE
rth − tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.02 0.01
0.05
0.01
10 µ
100 µ
Single Pulse
PDM
t
T
Duty = t/T
Rth(ch-c) = 1.72°C/W
1m
10 m
100 m
1
Pulse width tw (s)
10
Safe operating area
1000
ID max (pulse)*
ID max (continuous) 10 µs*
100 µs*
100 1 ms*
10 ms*
10 This area is limited by
RDS(ON)
DC operation
Tc = 25°C
1
0.1 * Single pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10 100
Drain-source voltage VDS (V)
EAS – Tch
30
20
10
0
25 50 75 100
Channel temperature (initial) Tch (°C)
15 V
0V
BVDSS
IAR
VDD
VDS
Test circuit
Waveform
RG = 25 Ω
VDD = 25 V, L = 14.9 µH
EAS =
1
2
L I2AR
BVDSS
BVDSS − VDD
5 2013-03-07
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K80E07NE.PDF ] | |
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