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BCF040T 반도체 회로 부품 판매점

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP



BeRex 로고
BeRex
BCF040T 데이터시트, 핀배열, 회로
BCF040T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 400 µm)
The BeRex BCF040T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 400 micron gate
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise
while providing high-gain and medium power from DC to 26.5 GHz. This product is well suited for either
wideband or narrow-band applications. The BCF040T is produced using state of the art metallization and
devices from each wafer are screened to insure reliability. These chips utilize SI3N4 passivation for
increased reliability.
Product Features
23.0 dBm Typical Output Power
13 dB Typical Power Gain @ 12 GHz
Low Phase Noise
0.3 X 400 Micron Recessed Gate
Applications
Commercial
Military / Hi-Rel
Test & Measurement
DC CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
MINIMUM
Idss Saturated Drain Current (Vgs = 0V, Vds = 2V)
Gm Transconductance (Vds = 3V, Vgs = 50% Idss)
Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V)
BVgd Drain Breakdown Voltage (Ig = 0.2 mA, source open)
BVgs Source Breakdown Voltage (Ig = 0.2 mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
80
50
-3.5
-15
-10
TYPICAL
120
70
-2.0
-11
-7
100
MAXIMUM UNIT
160 mA
mS
-0.5 V
V
V
° C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3


BCF040T 데이터시트, 핀배열, 회로
BCF040T
ELECTRICAL CHARACTERISTIC (Vds = 8V, Ta = 25° C)
PARAMETER/TEST CONDITIONS
P1dB Output Power @ P1dB (Vds = 8V, Ids = 50% Idss)
G1dB Gain @ P1dB (Vds = 8V, Ids = 50% Idss)
PAE PAE @ P1dB (Vds = 8V, Ids = 50% Idss)
NF Noise figure (Vds = 2V, Ids = 10 mA)
Ga Associated Gain (Vds = 2V, Ids = 10 mA)
TEST
FREQUENCY
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHz
12 GHz
MINIMUM
21.0
20.5
11.0
8.4
TYPICAL
23.0
22.5
13.0
10.4
32
30
1.65
10
MAXIMUM UNIT
dBm
dB
%
dB
dB
ELECTRICAL CHARACTERISTIC (Vds = 6V, Ta = 25° C)
PARAMETER/TEST CONDITIONS
P1dB Output Power @ P1dB (Vds = 6V, Ids = 50% Idss)
G1dB Gain @ P1dB (Vds = 6V, Ids = 50% Idss)
PAE PAE @ P1dB (Vds = 6V, Ids = 50% Idss)
NF Noise figure (Vds = 2V, Ids = 10 mA)
Ga Associated Gain (Vds = 2V, Ids = 10 mA)
TEST
FREQUENCY
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHZ
18 GHz
12 GHz
12 GHz
MINIMUM
20.5
202
10.8
8.3
TYPICAL
22.5
22.2
12.8
10.3
39
37
1.65
10
MAXIMUM UNIT
dBm
dB
%
dB
dB
MAXIMUM RATINGS (Ta = 25° C)
PARAMETERS
Vds Drain-Source Voltage
Vgs Gate-Source Voltage
Ids Drain Current
Igsf Forward Gate Current
Pin Input Power
Tch Channel Temperature
Tstg Storage Temperature
Pt Total Power Dissipation
ABSOLUTE
12 V
-8 V
Idss
10 mA
18 dBm
175° C
-60° C - 150° C
1.4 W
CONTINUOUS
8V
-4V
Idss
1.6 mA
@ 3dB compression
150° C
-60° C - 150° C
1.2 W
Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3




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HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP - BeRex