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BDX33 반도체 회로 부품 판매점

NPN Silicon Power Darlingtons



MCC 로고
MCC
BDX33 데이터시트, 핀배열, 회로
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
BDX33
THRU
BDX33D
0,9:708
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Designed For Complementary Use with BDX34, BDX34A, BDX34B,
:BDX34C and BDX34D
70W at 25 Cass Temperature
NPN Silicon
Power Darlingtons
10A Continuous Collector Current
Minimum hFE of 750 at 3.0V, 3.0A
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
°$EVROXWH 0D[LPXP 5DWLQJV #  & 8QOHVV 2WKHUZLVH 1RWHG
TO-220
Symbol
VCBO
VCEO
VEBO
IC
IB
PTOT
PTOT
TJ
TSTG
TA
Rating
Collector-Base Voltage (IE=0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
Collector-Emitter Voltage (IB=0)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
Emitter-Base Voltage
Continuous Collector Current
:Continuous Base Current
Continuous Device Dissipation at (or below) 25
:Case Temperature (see Note2)
Continuous Device Dissipation at (or below) 25
Free Air Temperature (see Note 3)
Operating Free Air Temperature Range
Storage Temperature Range
Operating Free-Air Temperature Range
Value
45
60
80
100
100
45
60
80
100
100
5.0
10
0.3
70
2.0
-55~+150
-55~+150
-55~+150
Unit
V
V
V
A
A
W
W
:::
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
: :2. Derate Linearly to 150 Case Temperature at the Rate of 0.56 W/
: :3. Derate Linearly to 150 Free Air Temperature at the Rate of 16m W/
°(OHFWULFDO &KDUDFWHULVWLFV #  & 8QOHVV 2WKHUZLVH 6SHFLILHG
Symbol
V(BR)CEO
Parameter
Collector-Emitter Breakdown
Voltage
(IC=100mA, IB=0,see note 3)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
Min
45
60
80
100
100
Typ
Max
Unit
V
B
F
Q
A
H
K
12 3
C
T
U
S
V
LJ
D
G
N
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
DIMENSIONS
INCHES
MM
DIM MIN MAX
MIN MAX
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .140 .190 3.56
4.82
D .020 .045 0.51
1.14
F
.139 .161
3.53
4.09
G .190 .110 2.29
H --- .250 ---
J
.012 .025
0.30
2.79
6.35
0.64
K .500 .580 12.70 14.73
L
.045 .060
1.14
1.52
N .190 .210 4.83
5.33
Q .100 .135 2.54
3.43
R .080 .115 2.04
S
.045 .055
1.14
2.92
1.39
T
.230 .270
5.84
6.86
U ----- .050 -----
1.27
V .045 ----- 1.15
-----
R
NOTE
Revision: A
www.mccsemi.com
1 of 4
2011/01/01


BDX33 데이터시트, 핀배열, 회로
BDX33 thru BDX33D
MCC
TM
Micro Commercial Components
Symbol
Parameter
Min Typ Max
Collector-Emitter Cut-Off Current
(VCE=30V, IB=0)
(VCE=30V, IB=0)
ICEO (VCE=40V, IB=0)
(VCE=50V, IB=0)
(VCE=60V, IB=0)
:(VCE=30V, IB=0, TC=100
:(VCE=30V, IB=0, TC=100
:(VCE=40V, IB=0, TC=100
:(VCE=50V, IB=0, TC=100
:(VCE=60V, IB=0, TC=100
)
)
)
)
)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
0.5
0.5
0.5
0.5
0.5
ÄÃ
ÄÃ
ÄÃ
ÄÃ
ÄÃ
Collector Cut-Off Current
(VCB=45V, IE=0)
(VCB=60V, IE=0)
ICBO (VCB=80V, IE=0)
(VCB=100V, IE=0)
(VCB=100V, IE=0)
:(VCB=45V, IE=0, TC=100 )
:(VCB=60V, IE=0, TC=100 )
:(VCB=80V, IE=0, TC=100 )
:(VCB=100V, IE=0, TC=100 )
:(VCB=120V, IE=0, TC=100 )
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
1.0
1.0
1.0
1.0
1.0
ÈÁÃ
ÈÁÃ
ÈÁÃ
ÈÁÃ
ÈÁÃ
IEBO Emitter Cut-Off Current
(VEB=5.0V, IC=0)
10
hFE Forward Current Transfer Ratio
(VCE=3.0V, IC=4.0A)
BDX33
750
(VCE=3.0V, IC=4.0A)
BDX33A
750
(VCE=3.0V, IC=3.0A)
(see notes 4 and 5) BDX33B
750
(VCE=3.0V, IC=3.0A)
BDX33C
750
(VCE=3.0V, IC=3.0A)
BDX33D
750
VBE(ON)
Base-Emitter Voltage
(VCE=3.0V, IC=4.0A)
(VCE=3.0V, IC=4.0A)
(VCE=3.0V, IC=3.0A)
(VCE=3.0V, IC=3.0A)
(VCE=3.0V, IC=3.0A)
(see notes 4 and 5)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
VCE(SAT)
Collector-Emitter Saturation Voltage
(IB=8.0mA, IC=4.0A)
(IB=8.0mA, IC=4.0A)
(IB=6.0mA, IC=3.0A)
(see notes 4 and 5)
(IB=6.0mA, IC=3.0A)
(IB=6.0mA, IC=3.0A)
BDX33
BDX33A
BDX33B
BDX33C
BDX33D
2.5
2.5
2.5
2.5
2.5
VEC Parallel Diode Forward Voltage
(IE=8.0A, IB=0)
 NOTES: 4. These parameters must be measured using pulse techniques, tp=300 V GXW\ F\FOH 2%.
4.0
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
7KHUPDO &KDUDFWHULVWLFV
Symbol
Parameter
Min
R-& Junction to Case Thermal Resistance
R-$ Junction to Free Air Thermal Resistance
:5HVLVWLYH/RDG6ZLWFKLQJ &KDUDFWHULVWLFV DW 
&DVH 7HPSHUDWXUH
Typ
Symbol
Parameter
Test Conditions
Min Typ
ton
Turn-On Time
IC=3.0A, IB(on)=12mA, IB(off)=-12mA
 toff
Turn-Off Time
VBE(off)=-3.5V, RL   WP  V GF 2%
1.0
5.0
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
Max
1.78
62.5
Max
Unit
mA
mA
mA
V
V
V
Unit
:/W
:/W
Unit
ôs
ôs
Revision: A
www.mccsemi.com
2 of 4
2011/01/01




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