G4PF50WD 반도체 회로 부품 판매점
IRG4PF50WD
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 International Rectifier |
PD- 91788
IRG4PF50WD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
G
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
Absolute Maximum Ratings
C
E
n-channel
VCES = 900V
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
TO-247AC
Parameter
VCES
Collector-to-Emitter Breakdown Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Max.
900
51
28
204
204
16
204
± 20
200
78
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
V
W
°C
RθJC
RθJC
RθCS
RθJA
Wt
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Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.64
0.83
–––
40
–––
Units
°C/W
g (oz)
1
IRG4PF50WD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
900 — — V VGE = 0V, IC = 250µA
— 0.295 — V/°C VGE = 0V, IC = 3.5mA
— 2.25 2.7
IC = 28A
VGE = 15V
— 2.74 — V IC = 60A
See Fig. 2, 5
— 2.12 —
IC = 28A, TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -13 — mV/°C VCE = VGE, IC = 250µA
26 39 — S VCE = 50V, IC = 28A
— — 500 µA VGE = 0V, VCE = 900V
— — 2.0
VGE = 0V, VCE = 10V, TJ = 25°C
— — 6.5 mA VGE = 0V, VCE = 900V, TJ = 150°C
— 2.5 3.5 V IC = 16A
See Fig. 13
— 2.1 3.0
IC = 16A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 160 240
IC = 28A
— 19 29 nC VCC = 400V
See Fig. 8
— 53 80
VGE = 15V
— 71 —
TJ = 25°C
— 50 —
— 150 220
ns IC = 28A, VCC = 720V
VGE = 15V, RG = 5.0Ω
— 110 170
Energy losses include "tail" and
— 2.63 —
diode reverse recovery.
— 1.34 — mJ See Fig. 9, 10, 18
— 3.97 5.3
— 69 —
TJ = 150°C, See Fig. 11, 18
— 52 —
— 270 —
ns IC = 28A, VCC = 720V
VGE = 15V, RG = 5.0Ω
— 190 —
Energy losses include "tail" and
— 6.0 — mJ diode reverse recovery.
— 13 — nH Measured 5mm from package
— 3300 —
VGE = 0V
— 200 — pF VCC = 30V
See Fig. 7
— 45 —
ƒ = 1.0MHz
— 90 135 ns TJ = 25°C See Fig.
— 164 245
TJ = 125°C 14
IF = 16A
— 5.8 10 A TJ = 25°C See Fig.
— 8.3 15
TJ = 125°C 15
VR = 200V
— 260 675 nC TJ = 25°C See Fig.
— 680 1838
TJ = 125°C 16 di/dt = 200A/µs
— 120 — A/µs TJ = 25°C See Fig.
— 76 —
TJ = 125°C 17
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