파트넘버.co.kr DN3765K4-G 데이터시트 PDF


DN3765K4-G 반도체 회로 부품 판매점

N-Channel Depletion-Mode Vertical DMOS FET



Supertex 로고
Supertex
DN3765K4-G 데이터시트, 핀배열, 회로
Supertex inc.
DN3765
N-Channel Depletion-Mode
Vertical DMOS FET
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Telecom
General Description
This depletion-mode (normally-on) transistor utilizes an
advanced vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Ordering Information
Part Number Package Option
Packing
DN3765K4-G TO-252 (D-PAK)
2000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Product Summary
BVDSX/BVDGX
650V
RDS(ON) (max)
8.0Ω
Pin Configuration
IDSS (min)
200mA
Absolute Maximum Ratings
DRAIN
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
BVDSX
BVDGX
±20V
-55OC to +150OC
SOURCE
GATE
Maximum junction temperature
150OC
TO-252 (D-PAK)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Package
θja
TO-252 (D-PAK)
81OC/W
Product Marking
Si YYWW
DN3765
LLLLLLL
YY = Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-252 (D-PAK)
Doc.# DSFP-DN3765
A070113
Supertex inc.
www.supertex.com


DN3765K4-G 데이터시트, 핀배열, 회로
Thermal Characteristics
Package
(continIDuous)
ID
(pulsed)
TO-252 (D-PAK)
300mA
500mA
Notes:
IMD o(cuonntetidnuoonuFs)Ri4s
limited
board,
2b5ymmmaxxr2a5temdmTjxo1f .15570mOCm..
Power Dissipation
@TA = 25OC
2.5W
IDR
300mA
DN3765
IDRM
500mA
Electrical Characteristics (TA = 25OC unless otherwise specified)
Sym Parameter
Min Typ Max Units Conditions
BVDSX Drain-to-source breakdown voltage
650 - - V VGS = -5.0V, ID = 100µA
VGS(OFF) Gate-to-source off voltage
-1.5 - -3.5 V VDS = 25V, ID= 10µA
ΔVGS(OFF) Change in VGS(OFF) with temperature
- - -4.5 mV/OC VDS = 25V, ID= 10µA
IGSS Gate body leakage current
- - 100 nA VGS = ± 20V, VDS = 0V
ID(OFF) Drain-to-source leakage current
- - 10 µA VGS = -10V, VDS = Max Rating
-
-
1.0
mA
VGS = -10V, VDS = 0.8 Max Rating,
TA = 125°C
IDSS Saturated drain-to-source current
200 -
- mA VGS = 0V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance -
- 8.0 Ω VGS = 0V, ID = 150mA
ΔRDS(ON) Change in RDS(ON) with temperature
- - 1.1 %/OC VGS = 0V, ID = 150mA
GFS Forward transductance
100 -
- mmho ID = 100mA, VDS = 10V
CISS
COSS
CRSS
Input capacitance
Common source output capacitance
Reverse transfer capacitance
- - 825
VGS = -10V,
- - 190 pF VDS = 25V,
- - 110
f = 1.0MHz
td(ON)
tr
td(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
- - 50
-
-
-
-
-
-
75
75
100
VDD = 25V,
ns ID = 150mA,
RGEN = 25Ω
VSD Diode forward voltage drop
- - 1.8 V VGS = -5.0V, ISD = 200mA
trr Reverse recovery time
- 800 -
ns VGS = -5.0V, ISD = 200mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V 90%
INPUT
10%
-10V
t(ON)
t(OFF)
td(ON)
tr
td(OFF)
tf
VDD
OUTPUT
0V
10%
90%
10%
90%
Pulse
Generator
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
Doc.# DSFP-DN3765
A070113
Supertex inc.
2 www.supertex.com




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: Supertex

( supertex )

DN3765K4-G data

데이터시트 다운로드
:

[ DN3765K4-G.PDF ]

[ DN3765K4-G 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


DN3765K4-G

N-Channel Depletion-Mode Vertical DMOS FET - Supertex