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Microchip |
DN1509
N-Channel, Depletion-Mode, Vertical DMOS FET
Features
• High-input impedance
• Low-input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakages
Applications
• Normally-on switches
• Battery operated systems
• Converters
• Linear amplifiers
• Constant current sources
• Telecom
Description
This low threshold, depletion-mode, normally-on, tran-
sistor utilizes an advanced vertical Diffusion Metal
Oxide Semiconductor (DMOS) structure and a well
proven silicon-gate manufacturing process. This com-
bination produces a device with the power-handling
capabilities of bipolar transistors, plus the high-input
impedance and positive-temperature coefficient inher-
ent in Metal-Oxide Semiconductor (MOS) devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced second-
ary breakdown.
Vertical DMOS Field-Effect Transistors (FETs) are ide-
ally suited to a wide range of switching and amplifying
applications where a very low threshold voltage, high
breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
2015 Microchip Technology Inc.
DS20005403B-page 1
DN1509
Package Type
SOURCE
GATE
N/C
DRAIN
N/C
5-lead SOT-23
See Table 2-1 for pin information
DRAIN
SOURCE
DRAIN
GATE
TO-243AA (SOT-89)
DS20005403B-page 2
2015 Microchip Technology Inc.
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