파트넘버.co.kr DN2470 데이터시트 PDF


DN2470 반도체 회로 부품 판매점

N-Channel Depletion-Mode Vertical DMOS FET



Supertex 로고
Supertex
DN2470 데이터시트, 핀배열, 회로
DN2470
N-Channel Depletion-Mode Vertical DMOS FET
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Battery operated systems
Telecom
Ordering Information
BV /BV
DSX
DGX
700V
R (max)
DS(ON)
42Ω
General Description
The DN2470 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FET is ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
I (min)
DSS
500mA
Package Options
TO-252 (D-PAK)
DN2470K4-G
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
BVDSX
BV
DGX
±20V
Operating and storage
temperature
-55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*Distance of 1.6mm from case for 10 seconds.
Package Option
Drain
Gate
Source
TO-252 (D-PAK)
(top view)


DN2470 데이터시트, 핀배열, 회로
DN2470
Thermal Characteristics
Package
ID
(continuous)1
ID
(pulsed)
TO-252
170mA
500mA
Notes:
1. ID (continuous) is limited by max rated Tj.
2. Mounted on FR4 board, 25mm x 25mm x 1.57mm
Power Dissipation
@TA = 25OC
2.5W2
Θjc (OC/W)
6.25
Θja (OC/W)
502
IDR1
170mA
IDRM
500mA
Electrical Characteristics
Symbol Parameter
Min Typ Max Units Conditions
BVDSX
V
GS(OFF)
ΔVGS(OFF)
IGSS
Drain-to-source breakdown voltage
Gate-to-source OFF voltage
Change in VGS(OFF) with temperature
Gate body leakage current
700 -
-
V VGS = -5.0V, ID = 100µA
-1.5 - -3.5
V V = 25V, I = 10µA
DS D
- - 4.5 mV/OC VDS = 25V, ID = 10µA
- - 100 nA VGS = ±20V, VDS = 0V
I Drain-to-source leakage current
D(OFF)
IDSS
RDS(ON)
Saturated drain-to-source current
Static drain-to-source ON-state
resistance
- - 1.0 µA VDS = Max rating, VGS = -10V
-
-
1.0
mA
VDS = 0.8 Max Rating,
VGS = -10V, TA = 125OC
- 500 -
mA VGS = 0V, VDS = 25V
- - 42 Ω VGS = 0V, ID = 100mA
ΔRDS(ON) Change in RDS(ON) with temperature
- - 1.1 %/OC VGS = 0V, ID = 100mA
GFS Forward transconductance
100 -
- mmho VDS = 10V, ID = 100mA
C
ISS
COSS
Input capacitance
Common source output capacitance
-
-
- 540
-
60
pF
VGS = -10V, VDS = 25V,
f = 1MHz
CRSS Reverse transfer capacitance
- - 25
td(ON)
tr
td(OFF)
tf
Turn-ON delay time
Rise time
Turn-OFF delay time
Fall time
- - 30
- - 45
VDD = 25V,
-
- 45
ns ID = 100mA,
RGEN = 25Ω,
- - 60
VSD Diode forward voltage drop
- - 1.8 V VGS = -5.0V, ISD = 200mA
trr
Notes:
Reverse recovery time
- 800 -
ns VGS = -5.0V, ISD = 200mA
1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
90%
-10V 10%
t(ON)
t(OFF)
td(ON)
tr
td(OFF)
tF
VDD
OUTPUT
0V
10%
90%
10%
90%
PULSE
GENERATOR
RGEN
INPUT
VDD
RL
OUTPUT
D.U.T.
2




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