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IXYS |
INTEGRATED CIRCUITS DIVISION
IBB110P
Integrated Telecom Circuits
Parameter
Blocking Voltage
Load Current
On-Resistance (max)
Rating
350
100
35
Units
VP
mArms / mADC
Features
• 3750Vrms Input/Output Isolation
• Three Functions in One Package
• Bidirectional Current Sensing
• Bidirectional Current Switching
• FCC Compatible
• No EMI/RFI Generation
• Small 16-Pin SOIC Package (PCMCIA Compatible)
• Machine Insertable, Wave Solderable
• Tape & Reel Versions Available
Applications
• Telecommunications
• Telecom Switching
• Tip/Ring Circuits
• Modem Switching (Laptop, Notebook,
Pocket Size)
• Hook Switch
• Dial Pulsing
• Ground Start
• Ringing Injection
• Instrumentation
• Multiplexers
• Data Acquisition
• Electronic Switching
• I/O Subsystems
• Meters (Watt-Hour, Water, Gas)
• Medical Equipment-Patient/Equipment Isolation
• Security
• Aerospace
• Industrial Controls
Description
The IBB110P Multifunction Telecom switch combines
two 350V normally closed (1-Form-B) relays and one
optocoupler in a single package. The relays use
optically coupled MOSFET technology to provide
1500Vrms of input to output isolation. The efficient
MOSFET switches and photovoltaic die use IXYS
Integrated Circuits Division’s patented OptoMOS
architecture, while the optically coupled output is
controlled by highly efficient GaAIAs infrared LEDs.
Circuit designers using the IBB110P can combine
three discrete functions in a single package, thus
using less space than traditional discrete component
solutions.
Approvals
• UL Recognized Component: File E76270
• CSA Certified Component: Certificate 1305490
• EN/IEC 60950-1 Certified Component:
TUV Certificate: B 12 11 82667 002
Ordering Information
Part #
IBB110P
IBB110PTR
Description
16-Pin SOIC (50/Tube)
16-Pin SOIC (1000/Reel)
Pin Configuration
1
(N/C)
2
3
4
5
6
7
8
(N/C)
16
15 (Form B)
14
13
12 (Form B)
11
10
9
1. (N/C)
2. + LED - Form B Relay #1
3. – LED - Form B Relay #1
4. + LED - Form B Relay #2
5. – LED - Form B Relay #2
6. Emitter - Phototransistor
7. Collector - Phototransistor
8. (N/C)
9. LED - Phototransistor +/–
10. LED - Phototransistor –/+
11. Output - Form B Relay #2
12. Common Source Relay #2
13. Output - Form B Relay #2
14. Output - Form B Relay #1
15. Common Source Relay #1
16. Output - Form B Relay #1
Switching Characteristics of
Normally Closed Devices
Form-B
DS-IBB110P_R05
IF
ILOAD
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toff
90%
ton
1
INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Input Control Current, Relay
Total Package Dissipation 1
Isolation Voltage, Input to Output
Operational Temperature
Storage Temperature
Ratings
50
1
3750
-40 to +85
-40 to +125
1 Derate linearly 1.67 mW / ºC
Units
mA
W
Vrms
°C
°C
IBB110P
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Electrical Characteristics @25ºC: Relay Section
Parameter
Conditions
Symbol
Min
Typ
Max
Units
Output Characteristics
Blocking Voltage (Peak)
Load Current
- VL - - 350 VP
Continuous
- IL - - 100 mArms / mADC
Peak
t=10ms
ILPK - - 350 mAP
On-Resistance
IL=100mA RON - - 35
Off-State Leakage Current
VL=350V, TJ=25ºC
ILEAK
-
-
1
A
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Input Characteristics
IF=5mA, VL=10V
VL=50V, f=1MHz
ton
toff
COUT
--3
--3
- 25 -
ms
ms
pF
Input Control Current to Activate
Input Control Current to Deactivate
Input Voltage Drop
Reverse Input Voltage
Reverse Input Current
IL=100mA
IL=1mA
IF=5mA
-
VR=5V
IF - - 5
IF 0.4 - -
VF 0.9 1.2 1.4
VR - - 5
IR - - 10
mA
mA
V
V
A
Electrical Characteristics @25ºC: Detector Section
Parameter
Output Characteristics
Phototransistor Blocking Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Input Characteristics
Input Control Current
Input Voltage Drop
Input Current (Detector Must be Off)
Capacitance, Input to Output
Isolation, Input to Output
Conditions
Symbol
Min
Typ
Max Units
IC=10A
BVCEO 20 50
VCE=5V, IF=0mA
ICEO
- 50
IC=2mA, IF=16mA
VSAT
- 0.3
IF=6mA, VCE=0.5V
CTR
33
-
IC=2mA, VCE=0.5V
IF=5mA
IC=1A, VCE=5V
VL=50V, f=1MHz
-
IF
VF
-
CI/O
VI/O
-2
0.9 1.2
5 25
-3
3750 -
-V
500 nA
0.5 V
-%
6 mA
1.4 V
- A
- pF
- Vrms
2
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