F60UA60DN 반도체 회로 부품 판매점
FFAF60UA60DN
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 Fairchild Semiconductor |
November 2014
FFAF60UA60DN
60 A, 600 V, UItrafast II Dual Diode
Features
• Ultrafast Recovery, Trr < 90ns (@ IF = 30 A)
• Max Forward Voltage, VF = 2.2 V (@ TC = 25°C)
• 600V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
• Boost Diode in PFC and SMPS
• Welder, UPS and Motor Control Application
Description
The FFAF60UA60DN is an ultrafast ll dual diode with low forward
voltage drop and rugged UIS capability. This device is intended
for use as freewheeling and clamping diodes in a variety of
switching power supplies and other power switching applications.
It is specially suited for use in switching power supplies and
industrial application as welder and UPS application.
Pin Assignments
12
3
1. Anode 2. Cathode 3. Anode
Absolute Maximum Ratings Per leg at TC = 25oC unless otherwise noted
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 45oC
TJ, TSTG
Operating and Storage Temperature Range
Thermal Characteristics Per leg at TC = 25oC unless otherwise noted
Symbol
Parameter
RJC
Maximum Thermal Resistance, Junction to Case
Package Marking and Ordering Information
Part Number
FFAF60UA60DN
Top Mark
F60UA60DN
Package Packing Method Reel Size
TO-3PF
Tube
N/A
Ratings
600
600
600
30
180
-65 to +175
Ratings
2.4
Tape Width
N/A
Unit
V
V
V
A
A
oC
Unit
oC/W
Quantity
30
©2009 Fairchild Semiconductor Corporation
FFAF60UA60DN Rev.C2
1
www.fairchildsemi.com
Electrical Characteristics Per leg at TC = 25oC unless otherwise noted
Symbol
VFM1
IRM1
trr
Irr
Qrr
WAVL
IF = 30 A
IF = 30 A
VR = 600 V
VR = 600 V
Parameter
IF = 30 A, diF/dt = 200 A/s
Avalanche Energy ( L = 40 mH)
TC
TC
=
=
25oC
125oC
TC
TC
=
=
25oC
125oC
TC = 25oC
Min.
-
-
-
-
-
-
-
20
Notes:
1: Pulse: Test Pulse width = 300s, Duty Cycle = 2%
Test Circuit and Waveforms
Typ.
-
-
-
-
-
-
-
-
Max.
2.2
2.0
100
150
90
8
360
-
Unit
V
A
ns
A
nC
mJ
Figure 1. Diode Reverse Recovery Test Circuit & Waveform
Figure 2. Unclamped Inductive Switching Test Circuit & Waveform
©2009 Fairchild Semiconductor Corporation
FFAF60UA60DN Rev.C2
2
www.fairchildsemi.com
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F60UA60DN data
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