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54190 반도체 회로 부품 판매점

Synchronous Decade Up/Down Counters



National Semiconductor 로고
National Semiconductor
54190 데이터시트, 핀배열, 회로
January 1988
MM54HC190 MM74HC190 Synchronous
Decade Up Down Counters with Mode
Control MM54HC191 MM74HC191
Synchronous Binary Up Down Counters
with Mode Control
General Description
These high speed synchronous counters utilize advanced
silicon-gate CMOS technology They possess the high noise
immunity and low power consumption of CMOS technology
along with the speeds of low power Schottky TTL
These circuits are synchronous reversible up down count-
ers The MM54HC191 MM74HC191 are 4-bit binary count-
ers and the MM54HC190 MM74HC190 are BCD counters
Synchronous operation is provided by having all flip-flops
clocked simultaneously so that the outputs change simulta-
neously when so instructed by the steering logic This mode
of operation eliminates the output counting spikes normally
associated with asynchronous (ripple clock) counters
The outputs of the four master-slave flip-flops are triggered
on a low-to-high level transition of the clock input if the
enable input is low A high at the enable input inhibits count-
ing The direction of the count is determined by the level of
the down up input When low the counter counts up and
when high it counts down
These counters are fully programmable that is the outputs
may be preset to either level by placing a low on the load
input and entering the desired data at the data inputs The
output will change independent of the level of the clock in-
put This feature allows the counters to be used as modulo-
N dividers by simply modifying the count length with the
preset inputs
Two outputs have been made available to perform the cas-
cading function ripple clock and maximum minimum count
The latter output produces a high-level output pulse with a
duration approximately equal to one complete cycle of the
clock when the counter overflows or underflows The ripple
clock output produces a low-level output pulse equal in
width to the low-level portion of the clock input when an
overflow or underflow condition exists The counters can be
easily cascaded by feeding the ripple clock output to the
enable input of the succeeding counter if parallel clocking is
used or to the clock input if parallel enabling is used The
maximum minimum count output can be used to accom-
plish look-ahead for high-speed operation
Features
Y Level changes on Enable or Down Up can be made re-
gardless of the level of the clock input
Y Wide power supply range 2 – 6V
Y Low quiescent supply current 80 mA maximum
(74HC Series)
Y Low input current 1 mA maximum
Connection Diagram
Dual-In-Line Package
Load
H
H
L
H
Enable
G
L
L
X
H
Down
Up
L
H
X
X
Clock Function
u Count Up
u Count Down
X Load
X No Change
Asynchronous inputs Low input to load sets QA e A
QB e B QC e C and QD e D
Order Number MM54HC190 191 or MM74HC190 191
Top View
C1995 National Semiconductor Corporation TL F 5322
TL F 5322 – 1
RRD-B30M105 Printed in U S A


54190 데이터시트, 핀배열, 회로
Absolute Maximum Ratings (Notes 1 2)
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage (VCC)
DC Input Voltage (VIN)
DC Output Voltage (VOUT)
Clamp Diode Current (IIK IOK)
DC Output Current per pin (IOUT)
DC VCC or GND Current per pin (ICC)
Storage Temperature Range (TSTG)
Power Dissipation (PD)
(Note 3)
S O Package only
b0 5 to a7 0V
b1 5 to VCCa1 5V
b0 5 to VCCa0 5V
g20 mA
g25 mA
g50 mA
b65 C to a150 C
600 mW
500 mW
Lead Temp (TL) (Soldering 10 seconds)
260 C
Operating Conditions
Supply Voltage (VCC)
DC Input or Output Voltage
(VIN VOUT)
Operating Temp Range (TA)
MM74HC
MM54HC
Min
2
0
b40
b55
Input Rise or Fall Times
(tr tf)
VCCe2 0V
VCCe4 5V
VCCe6 0V
Max
6
VCC
a85
a125
1000
500
400
Units
V
V
C
C
ns
ns
ns
DC Electrical Characteristics (Note 4)
Symbol
Parameter
Conditions
VCC
TAe25 C
Typ
74HC
54HC
TAeb40 to 85 C TAeb55 to 125 C
Guaranteed Limits
Units
VIH Minimum High Level
Input Voltage
V
V
V
V
V
V
VIL Maximum Low Level
Input Voltage
V
V
V
V
V
V
VOH
Minimum High Level VINeVIH or VIL
Output Voltage
lIOUTls mA
V
V
V
V
V
V
VINeVIH or VIL
lIOUTls mA
lIOUTls mA
VOL Maximum Low Level VINeVIH or VIL
Output Voltage
lIOUTls mA
V
V
V
V
V
V
V
V
V
V
VINeVIH or VIL
lIOUTls mA
lIOUTls mA
V
V
IIN
Maximum Input
VINeVCC or GND
V
Current
g
g
V
V
g mA
ICC
Maximum Quiescent VINeVCC or GND
V
Supply Current
IOUTe mA
mA
Note 1 Absolute Maximum Ratings are those values beyond which damage to the device may occur
Note 2 Unless otherwise specified all voltages are referenced to ground
Note 3 Power Dissipation temperature derating plastic ‘‘N’’ package b12 mW C from 65 C to 85 C ceramic ‘‘J’’ package b12 mW C from 100 C to 125 C
Note 4 For a power supply of 5V g10% the worst case output voltages (VOH and VOL) occur for HC at 4 5V Thus the 4 5V values should be used when designing
with this supply Worst case VIH and VIL occur at VCCe5 5V and 4 5V respectively (The VIH value at 5 5V is 3 85V ) The worst case leakage current (IIN ICC and
IOZ) occur for CMOS at the higher voltage and so the 6 0V values should be used
VIL limits are currently tested at 20% of VCC The above VIL specification (30% of VCC) will be implemented no later than Q1 CY’89
2




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