파트넘버.co.kr P75N06 데이터시트 PDF


P75N06 반도체 회로 부품 판매점

PJP75N06



Pan Jit International 로고
Pan Jit International
P75N06 데이터시트, 핀배열, 회로
PJP75N06
60V N-Channel Enhancement Mode MOSFET
FEATURES
• RDS(ON), VGS@10V,IDS@30A=13m
• RDS(ON), VGS@4.5V,IDS@30A=18m
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICALDATA
• Case: TO-220 Molded Plastic
• Terminals : Solderable per MIL-STD-750D,Method 1036.3
• Marking : P75N06
Drain
Gate
Source
PIN Assignment
1. Gate
2. Drain
3. Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Maximum Power Dissipation
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
Avalanche Energy with Single Pulse
ID=40A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
TA= 2 5 OC
TA= 7 5 OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
S ym b o l
V DS
V GS
ID
ID M
PD
TJ,TSTG
E AS
RθJC
RθJA
Limit
60
+20
75
350
105
62.5
-55 to + 150
400
1.2
62
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.19.2006
PAGE . 1


P75N06 데이터시트, 핀배열, 회로
PJP75N06
ELECTRICALCHARACTERISTICS
Static
Parameter
S ym b o l
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage
Forward Transconductance
Dynamic
BV
DSS
V GS(th)
R D S (o n)
R D S (o n)
ID S S
IGS S
g fS
To ta l Ga te C ha r g e
Gate-Source Charge
Gate-Drain Charge
Turn-On D e la y Ti me
Turn-On Ri s e Ti me
Turn-Off D e la y Ti me
Turn-Off F a ll Ti me
Inp ut C a p a ci ta nce
Output Capacitance
Re ve rs e Tra ns fe r C a p a c i ta nc e
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Qg
Qgs
Qgd
Td(on)
trr
td(off)
tf
C iss
C oss
C rss
Is
V SD
Te s t C o nd i ti o n
V =0V, I =250uA
GS D
V DS=V GS, ID=2 5 0 uA
VGS=4.5V, ID=30A
VGS=10V, ID=30A
VDS=60V, VGS=0V
V GS=+20V, V DS=0V
V DS=1 0 V, ID=1 5 A
V DS=3 0 V,ID=3 0 A ,V GS=5 V
V DS=3 0 V, ID=3 0 A
V GS=10V
VDD=30V , RL=15
ID=2A , VGEN=10V
RG=2.5
V DS=25V, V GS=0V
f=1.0MHZ
-
IS=3 0 A , V GS=0 V
Mi n.
Typ .
M a x.
Uni ts
60 - - V
1 - 3V
-
13.5
18.0
m
-
10.5
13.0
- - 1 uA
-
-
+100
nA
40 - - S
- 42 -
- 82 -
nC
- 10 -
-
13.5
-
-
18.5
25
-
16.5
20
ns
- 60 90
- 9.0 20
-
4200
-
- 810 - p F
- 550 -
- - 75 A
-
0.98
1.5
V
Switching
Test Circuit
VIN
RG
VDD
RL
VOUT
Gate Charge
Test Circuit
VGS
1mA
RG
VDD
RL
STAD-JUN.19.2006
PAGE . 2




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