|
Philips |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF851A; BF851B; BF851C
N-channel junction FETs
Product specification
File under Discrete Semiconductors, SC07
1995 Apr 14
Philips Semiconductors
Philips Semiconductors
N-channel junction FETs
Product specification
BF851A; BF851B; BF851C
FEATURES
• High transfer admittance
• Low input capacitance
• Low feedback capacitance
• Low noise.
APPLICATIONS
• Preamplifiers for AM tuners in car radios.
handbook, half1pa2ge
3
g
MAM042
d
s
DESCRIPTION
N-channel symmetrical junction field effect transistors in a
SOT54 (TO-92) package.
PINNING - SOT54 (TO-92)
PIN SYMBOL
DESCRIPTION
1 g gate
2 s source
3 d drain
Fig.1 Simplified outline and symbol.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS drain-source voltage (DC)
IDSS drain current
BF851A
BF851B
BF851C
Ptot
yfs
total power dissipation
forward transfer admittance
BF851A
BF851B
BF851C
Ciss input capacitance
Crss reverse transfer capacitance
CONDITIONS
VGS = 0; VDS = 8 V
up to Tamb = 40 °C
VGS = 0; VDS = 8 V
f = 1 MHz
f = 1 MHz
MIN. MAX. UNIT
− 25 V
2 6.5 mA
6 15 mA
12 25 mA
− 400 mW
12 20 mS
16 25 mS
20 30 mS
− 10 pF
− 3 pF
1995 Apr 14
2
|