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PDF A1002 Data sheet ( Hoja de datos )
| Número de pieza | A1002 | |
| Descripción | PNP Transistor - 2SA1002 | |
| Fabricantes | New Jersey Semiconductor | |
| Logotipo |  |
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•crTVf
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, line.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1002
DESCRIPTION
• High Current Capability
• Collector-Emitter Breakdown Voltage-
:V(BR)cEO=-120V(Min.)
APPLICATIONS
• Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120 V
VEBO Emitter-Base Voltage
-6 V
Ic Collector Current-Continuous
Collector Power Dissipation
PC @TC=25'C
T, Junction Temperature
-12 A
120 W
150 'C
Tstg Storage Temperature
-55-150
"C
PIN 1.BASE
2. BWIITTER
3. COLLECT OR (CAS E)
TO-3 package
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B
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DIM MIN MAX
A 39 00
B 2530 26.67
i" 7.80 8.5Q
D O.SO I 10
E t.40 1 .60
_a_
H
10 92
5 46
K 11.33 1350
JI&LJL 1675 1705
N 1940
v 4.0C" ~42(p
v 30.CK? _^_20_,
V 430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. "
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet A1002.PDF ] | |
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