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PDF 9NM60N Data sheet ( Hoja de datos )

Número de pieza 9NM60N
Descripción STD9NM60N
Fabricantes STMicroelectronics 
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No Preview Available ! 9NM60N Hoja de datos, Descripción, Manual

STD9NM60N
STF9NM60N, STP9NM60N
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK
MDmesh™ II Power MOSFET
Features
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
VDSS
(@Tjmax)
RDS(on)
max.
650 V < 0.745 Ω
ID
6.5 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
Marking
9NM60N
Packages
DPAK
TO-220FP
TO-220
!-V
Packaging
Tape and reel
Tube
October 2010
Doc ID 18063 Rev 1
1/16
www.st.com
16

1 page




9NM60N pdf
STD9NM60N, STF9NM60N, STP9NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 480 V, ID = 6.5 A
RG = 4.7 Ω VGS = 10 V
(see Figure 17)
Min. Typ. Max. Unit
28
23
--
52.5
26.7
ns
ns
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
6.5 A
-
26 A
VSD (2) Forward on voltage
ISD = 6.5 A, VGS = 0 - 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.5 A, di/dt = 100 A/µs
264
VDD = 60 V
- 1.9
(see Figure 22)
14.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 6.5 A, di/dt = 100 A/µs
324
VDD = 60 V, Tj = 150 °C
- 2.3
(see Figure 22)
14.2
ns
µC
A
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 18063 Rev 1
5/16

5 Page





9NM60N arduino
STD9NM60N, STF9NM60N, STP9NM60N
Package mechanical data
Table 9. TO-220FP mechanical data
Dim.
A
B
D
E
F
F1
F2
G
G1
H
L2
L3
L4
L5
L6
L7
Dia
Min.
4.4
2.5
2.5
0.45
0.75
1.15
1.15
4.95
2.4
10
28.6
9.8
2.9
15.9
9
3
Figure 23. TO-220FP drawing
L7
A
B
Dia
L6
mm
Typ.
16
D
L5
F1 F2
H
Max.
4.6
2.7
2.75
0.7
1
1.70
1.70
5.2
2.7
10.4
30.6
10.6
3.6
16.4
9.3
3.2
E
F
G
G1
L2
L3
Doc ID 18063 Rev 1
L4
7012510_Rev_K
11/16

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