파트넘버.co.kr FW245 데이터시트 PDF


FW245 반도체 회로 부품 판매점

DC / DC Converter Applications



Sanyo Semicon Device 로고
Sanyo Semicon Device
FW245 데이터시트, 핀배열, 회로
Ordering number : ENN7133
Features
Low ON-resistance.
4V drive.
Ultrahigh-speed switching.
FW245
N-Channel Silicon MOSFET
FW245
DC / DC Converter Applications
Package Dimensions
unit : mm
2129
[FW245]
85
Specifications
Absolute Maximum Ratings at Ta=25°C
1
5.0
4
0.595 1.27 0.43
1 : Source1
2 : Gate1
3 : Source2
0.2 4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm2!0.8mm) 1unit
Mounted on a ceramic board (1200mm2!0.8mm)
Ratings
30
±20
7
52
1.7
2.0
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W245
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=7A
ID=7A, VGS=10V
ID=4A, VGS=4.5V
min
30
1.0
7
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.4 V
10 S
26 34 m
39 55 m
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM TA-2608 No.7133-1/4


FW245 데이터시트, 핀배열, 회로
FW245
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=7A
VDS=10V, VGS=10V, ID=7A
VDS=10V, VGS=10V, ID=7A
IS=7A, VGS=0
Ratings
min typ max
Unit
550 pF
170 pF
90 pF
9 ns
73 ns
41 ns
54 ns
10 nC
1.5 nC
1.0 nC
0.82 1.2 V
Switching Time Test Circuit
VIN
10V
0V
PW=10µs VIN
D.C.1%
G
VDD=15V
ID=7A
RL=2.1
D VOUT
P.G 50S FW245
Electrical Connection
D1 D1 D2 D2
S1 G1 S2 G2
Top view
ID -- VDS
10
9
8
7 3.0V
6
5
4
3 VGS=2.5V
2
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT00557
RDS(on) -- VGS
60
Ta=25°C
55
50
45 ID=7.0A
40 4.0A
35
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
Gate-to-Source Voltage, VGS -- V IT04012
ID -- VGS
10
VDS=10V
9
8
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate-to-Source Voltage, VGS -- V IT00558
60 RDS(on) -- Ta
50
40
I D=4.0A, V GS=4.5V
30 ID=7.0A, VGS=10.0V
20
10
0
--50 --25
0
25 50 75 100 125 150
Ambient Temperature, Ta -- °C
IT04013
No.7133-2/4




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FW245 converter

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