파트넘버.co.kr FP105 데이터시트 PDF


FP105 반도체 회로 부품 판매점

DC-DC Converter Applications



Sanyo Semicon Device 로고
Sanyo Semicon Device
FP105 데이터시트, 핀배열, 회로
Ordering number:EN4656
FP105
TR:PNP Epitaxial Planar Silicon Transistor
SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type with a PNP transistor and a Shottky
barrier diode contained in one package, facilitating
high-density mounting.
· The FP105 is formed with 2 chips, one being
equivalent to the 2SB1123 and the other the SB05-
05CP, placed in one package.
Package Dimensions
unit:mm
2088A
[FP105]
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
[TR]
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
[SBD]
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Surge Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Mounted on ceramic board (250mm2×0.8mm)
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
Marking:105
Electrical Connection
SANYO:PCP4
(Bottom view)
Ratings
Unit
–60
–50
–6
–2
–4
–400
1.3
150
V
V
V
A
A
mA
W
˚C
50
55
500
5
–55 to +125
–55 to +125
V
V
mA
A
˚C
˚C
Continued on next page.
1:Base
2:Common
3:Emitter
4:Common
5:Anode
6:Common
7:Common
(Common:Collcector,
Cathode)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62094MT (KOTO) AX-9348 No.4656-1/4


FP105 데이터시트, 핀배열, 회로
FP105
Continued from preceding page.
Electrical Characteristics at Ta=25˚C
.Parameter
[TR]
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
Conditons
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
VCB=–50V, IE=0
VEB=–4V, IC=0
VCE=–2V, IC=–100mA
VCE=–2V, IC=–1.5A
VCE=–10V, IC=–50mA
VCE=–10V, f=1MHz
IC=–1.0A, IB=–50mA
IC=–1.0A, IB=–50mA
IC=–10µA, IE=0
IC=–1mA, RBE=
IE=–10µA, IC=0
See specified Test Circuit
See specified Test Circuit
tf See specified Test Circuit
VR
VF
IR
C
trr
Rthj-a
IR=200µA
IF=500mA
VR=25V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit
Mounted on ceramic board (250mm2×0.8mm)
Switching Time Test Circuit
(TR)
(SBD)
Ratings
min typ max
Unit
–0.1 µA
–0.1 µA
140 560
40
150 MHz
22 pF
–0.3 –0.7 V
–0.9 –1.2 V
–60 V
–50 V
–6 V
60 ns
450 ns
30 ns
50 V
0.55 V
50 µA
22 pF
10 ns
120 ˚C/W
No.4656-2/4




PDF 파일 내의 페이지 : 총 4 페이지

제조업체: Sanyo Semicon Device

( sanyo )

FP105 converter

데이터시트 다운로드
:

[ FP105.PDF ]

[ FP105 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


FP100

HIGH PERFORMANCE PHEMT - Filtronic Compound Semiconductors



FP1000

(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES - ETC



FP1000A

(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES - ETC



FP1009

(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES - ETC



FP1009A

(FP1010 Series) SILICON SURGE SUPPRESSOR DIODES - ETC



FP100F

Spice Model - VMI



FP100F

RECTIFIER STACKS 2.2 A FORWARD CURRENT 3000 NS RECOVERY TIME - New Jersey Semiconductor



FP100R06KE3

EconoPIM3 module - eupec GmbH



FP100R12KT4

EconoPIM3 module - Infineon Technologies