파트넘버.co.kr BD3500FVM 데이터시트 PDF


BD3500FVM 반도체 회로 부품 판매점

Nch FET Ultra LDO Controllers



ROHM Semiconductor 로고
ROHM Semiconductor
BD3500FVM 데이터시트, 핀배열, 회로
High Performance Regulators for PCs
Nch FET Ultra LDO Controllers
for PC Chipsets
BD3504FVM,BD3500FVM,BD3501FVM,BD3502FVM
No.10030EAT29
Description
The BD3500/01/02/04FVM is an ultra-low dropout linear regulator controller for chipset that can achieve ultra-low voltage
input to ultra-low voltage output. By using N-MOSFET for external power transistor, the controller can be used at ultra-low
I/O voltage difference up to voltage difference generated by ON resistance. In addition, because best suited power
transistor can be chosen in accord with the output current, downsizing and cost reduction of the set can be achieved.
Because by reducing the I/O voltage difference, large current output is achieved and conversion loss can be reduced,
switching power supply can be replaced. BD3500/01/02/04FVM does not need any choke coil, diode for rectification and
power transistor which are required for switching power supply, total cost of the set can be reduced and compact size can be
achieved for the set. Using external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage
output start-up time can be adjusted by using the NRCS terminal, it is possible to flexibly meet the power supply sequence of
the set.
Features
1) Reduced rush current by NRCS
2) Built-in driver for external Nch h transistor
3) Adoption of MSOP8 package: 2.9 x 4.0 x 0.9 (mm)
4) Built-in timer latch short protection circuit
5) Built-in low input maloperation prevention circuit
6) Output voltage variable type
7) Built-in overheat protection circuit
Applications
Mobile PC, desktop PC, digital home appliances
Line up matrix
Parameter
Output Voltage
NRCS
(Soft start)
Timer latch short
protection circuit
VIN UVLO
External FET
GATE Drive Current
BD3500FVM
1.8V (Fix)
(Independent Setting)
(Independent Setting)
Hysterisis
+1/-3mA
BD3501FVM
1.5V (Fix)
(Independent Setting)
(Independent Setting)
Hysterisis
+1/-3mA
BD3502FVM
BD3504FVM
1.2V (Fix)
Variable(0.652.5V)
(Independent Setting)
(Same Timer Latch)
(Independent Setting)
(Same NRCS)
Hysterisis
Detected at start-up only
(set by external resistor)
+1/-3mA
+3/-3mA
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/16
2010.05 - Rev.A


BD3500FVM 데이터시트, 핀배열, 회로
BD3504FVM,BD3500FVM,BD3501FVM,BD3502FVM
Absolute maximum ratings (Ta=25)
BD3500/01/02FVM
Parameter
Symbol
Input Voltage
VCC
Drain Voltage (VIN)
VIN
Enable Input Voltage
Ven
Power Dissipation
Pd
Operating Temperature Range
Topr
Storage Temperature Range
Tstg
Maximum Junction Temperature
Tjmax
*1 However, not exceeding Pd.
*2 Pd derating at 3.5mW/for temperature above Ta=25
BD3504FVM
Parameter
Symbol
Supply Voltage
VCC
Drain Voltage
VD
Enable Input Voltage
Ven
Power dissipation
Pd
Operating temperature range
Topr
Storage temperature range
Tstg
Maximum Junction Temperature
Tjmax
*3 However, not exceeding Pd.
*4 Pd derating at 3.5mW/for temperature above Ta=25
Ratings
7 *1
7
7
437.5 *2
-10+100
-55+150
+150
Ratings
7 *3
7
7
437.5 *4
-10+100
-55+150
+150
Recommended operating conditions
BD3500/01/02FVM
Parameter
Symbol
Supply Voltage
VCC
Drain Voltage(VIN)
VIN
Enable Input Voltage
Ven
Capacitor on NRCS Terminal
CNRCS
Capacitor on SCP Terminal
CSCP
No radiation-resistant design is adopted for the present product.
Ratings
MIN
4.5
Vo×1.15
-0.3
0.001
0.001
MAX
5.5
5.5
5.5
1
1
BD3504FVM
Parameter
Symbol
Supply Voltage
VCC
Drain Voltage
VD
Enable Input Voltage
Ven
Capacitor in NRCS pin
CNRCS
Output Voltage
VOUT
No radiation-resistant design is adopted for the present product.
MIN
4.5
0.65
-0.3
0.001
0.65
Ratings
MAX
5.5
5.5
5.5
1
2.5
Technical Note
Unit
V
V
V
mW
Unit
V
V
V
mW
Unit
V
V
V
µF
µF
Unit
V
V
V
µF
V
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
2/16
2010.05 - Rev.A




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BD3500FVM controller

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Nch FET Ultra LDO Controllers - ROHM Semiconductor