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PDF PI2003 Data sheet ( Hoja de datos )
| Número de pieza | PI2003 | |
| Descripción | Universal Active ORing Controller IC | |
| Fabricantes | Vicor Corporation | |
| Logotipo |  |
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PI2003
Cool-ORingTM Series
Universal Active ORing Controller IC
Description
The PI2003 Cool-ORingTM solution is a universal
high-speed Active ORing controller IC designed for
use with N-channel MOSFETs and is optimized for -
48V redundant power system architectures. The
PI2003 Cool-ORing controller enables an extremely
low power loss solution with fast dynamic response
to input power fault conditions, critical for high
availability systems. The PI2003 controls single or
parallel MOSFETs to address Active ORing
applications protecting against power source
failures. The PI2003 is optimized for -48V low-side
Active ORing applications. An internal VC shunt
regulator enables biasing of the controller directly
from -48V(GND).
The gate drive output turns the MOSFET on during
normal steady state operation, while achieving high-
speed turn-off during input power source fault
conditions, that cause reverse current flow, with
auto-reset once the fault clears. The MOSFET
drain-to-source voltage is monitored to detect
normal forward, excessive forward, light load and
reverse current flow. The PI2003 provides an active
low fault flag output to the system during excessive
forward current, reverse current and light load.
www.DaTtayShpeiect4aUl.cAompplications:
Features
• Optimized for -48V ORing applications
• Fast Dynamic Response to Power Source
failures, with 160ns reverse current turn-off
delay time
• 4A gate discharge current
• Accurate MOSFET drain-to-source voltage
sensing to indicate system level fault conditions
• Low quiescent current enables biasing directly
from -48V(GND).
• 100V for 100ms operation in low side
applications
• Active low fault flag output
Applications
• Low-side -48Vbus Active ORing
• N+1 Redundant Power Systems
• Servers & High End Computing
• Telecom Systems
• High current Active ORing
Package Information
The PI2003 is offered in the following packages:
• 10 Lead 3mm x 3mm TDFN package
• 8 Lead SOIC package
Figure 1: PI2003 Low-Side Active ORing
Picor Corporation • picorpower.com
PI2003
Rev 1.0
Page 1 of 16
1 page  
Functional Description:
The PI2003 Cool-ORing controller IC is designed to
drive single or paralleled N-channel MOSFETs in
Active ORing applications, and optimized for -48V
applications. The PI2003 used with an external
MOSFET can function as an ideal ORing diode in
low side of a redundant power system, significantly
reducing power dissipation and eliminating the need
for heatsinking.
An N-channel MOSFET in the conduction path offers
extremely low on-resistance resulting in a dramatic
reduction of power dissipation versus the
performance of a diode used in conventional ORing
applications. This can allow for the elimination of
complex heat sinking and other thermal
management requirements. While the gate remains
above the gate threshold voltage it will allow current
to flow in the forward and reverse direction. Ideal
ORing applications do not allow for reverse current
flow, so the controller detect reverse current caused
by input power source failures and turn off the the
MOSFET as quickly as possible. Once the gate
voltage falls below the gate threshold, the MOSFET
is off and the body diode will be reverse biased
preventing reverse current flow and subsequent
excessive voltage droop on the redundant bus.
During forward over-current conditions the controller
maintains gate drive to keep the MOSFET forward
drop and power dissipation as low as possible.
While conventional ORing solutions using diodes
offer no protection against forward over-current
conditions. The PI2003 will provide an active-low
fault flag to the system via the FT pin. The fault flag
is also issued during the reverse current condition,
www.DaatanSdheliegt4hUt .lcooamd or shorted MOSFET conditions.
Differential Amplifier:
The PI2003 integrates a high-speed low offset
voltage differential amplifier to sense the difference
between the Sense Positive (SP) pin voltage and
Sense Negative (SN) pin voltage with high accuracy.
The amplifier output is connected to three
comparators: Reverse comparator, Forward
comparator, and Forward over-current comparator.
Reverse Current Comparator: RVS
The reverse current comparator provides the most
critical function in the controller, detecting negative
voltage caused by reverse current. When the SN
pin is 6mV higher than the SP pin, the reverse
comparator will enable the gate discharge circuit and
turn off the MOSFETs in typically 160ns.
The reverse comparator has typically 3mV of
hysteresis referenced to SP-SN.
Forward Voltage Comparator: FWD
The FWD comparator detects when a forward
current condition exists and SP is 6mV(typical)
positive with respect to SN. When SP-SN is less
than 6mV, the FWD comparator will assert the Fault
flag to report a fault condition indicative of a light
load or “load not present” condition or possible
shorted MOSFET.
Forward Over Current Comparator: FOC
The FOC comparator indicates an excessive forward
current condition when SP is 150mV(typical) higher
than SN. When the GATE output voltage is greater
than 50% of the VC voltage and SP-SN is higher
than 150mV, the PI2003 will initiate a fault condition
via the FT pin.
VC and Internal Voltage Regulator:
The PI2003 has a separate input (VC) that provides
power to the control circuitry and the gate driver. An
internal regulator clamps the VC voltage (VVC-CLM ) to
11V.
VC may be tied to a voltage higher than VVC-CLM
through a resistor to limit VC current.
The internal regulator circuit has a comparator to
monitor VC voltage and initiates a FAULT condition
when VC is lower than the VC Under-Voltage
Threshold, 7.15V
Gate Driver:
The gate driver (GATE) output is configured to drive
an external N-channel MOSFET. In the high state,
the gate driver applies a 150µA current source to the
MOSFET gate limited to the VC voltage.
When a reverse current fault is initiated, the gate
driver pulls the GATE pin low and discharges the
FET gate with 4 Apeak capability.
When the input source voltage is applied before the
MOSFET is fully enhanced, a voltage greater than
the Forward Over Current (FOC) Threshold may be
present across the MOSFET. To avoid an erroneous
FOC detection, a VGS detector blanks the FOC and
FWD comparators from initiating a fault, until the
GATE pin reaches 50% of VC pin voltage.
Fault:
The fault circuit output is an open collector with 40μs
delay to prevent any false triggering. The FT pin
will be pulled low when any of the following faults
occur:
• Reverse current
• Forward Over-Current and VG > ½ VC
Picor Corporation • picorpower.com
PI2003
Rev 1.0
Page 5 of 16
5 Page 
current fault has been detected. In Active ORing
applications when one of the input power sources is
shorted, a large reverse current is sourced from the
circuit output through the MOSFET. Depending on
the output impedance of the system, the reverse
current may reach over 60A in some conditions
before the MOSFET is turned off. Such high current
conditions will store energy even in a small parasitic
element. For example, a 1nH parasitic inductance
with 60A reverse current will store 1.8µJ (½Li2).
When the MOSFET is turned off, the stored energy
will be released and will produce high negative
voltage ringing at the MOSFET source. This event
will create a high voltage difference across the drain
and source of the MOSFET.
The MOSFET current rating and maximum power
dissipation are closely related. Generally the lower
the MOSFET Rds(on), the higher the current
capability and the lower the resultant power
dissipation. This leads to reduced thermal
management overhead, but will ultimately be higher
cost compared to higher Rds(on) parts. It is
important to understand the primary design goal
objectives for the application in order to effectively
trade off the performance of one MOSFET versus
another.
Power dissipation in active ORing circuits is derived
from the total source current and the on-state
resistance of the selected MOSFET.
MOSFET power dissipation:
Pd MOSFET = Is 2 ∗ Rds(on)
Where :
Is : Source Current
www.DaRtadSshe(oetn4)U.:coMmOSFET on-state resistance
Note:
In the calculation use Rds(on) at maximum MOSFET
temperature because Rds(on) is temperature
dependent. Refer to the normalized Rds(on) curves
in the MOSFET manufacturers datasheet. Some
MOSFET Rds(on) values may increase by 50% at
125°C compared to values at 25°C.
The Junction Temperature rise is a function of power
dissipation and thermal resistance.
TriseMOSFET = RthJA ∗ PdMOSFET = RthJA ∗ Is2 ∗ Rds(on) ,
Where:
RthJA : Junction-to-Ambient thermal resistance
Rds(on) and PI2003 sensing:
The PI2003 senses the MOSFET source-to-drain
voltage drop via the SP and SN pins to determine
the status of the current through the MOSFET.
When the MOSFET is fully enhanced, its source-to-
drain voltage is equal to the MOSFET on-state
resistance multiplied by the source current, VSD =
Rds(on)*Is. The reverse current threshold is set for
-6mV and when the differential voltage between the
SP & SN pins is more negative than -6mV, i.e. SP-
SN≤-6mV, the PI2003 detects a reverse current
fault condition and pulls the MOSFET gate pin low,
thus turning off the MOSFET and preventing further
reverse current. The reverse current fault protection
disconnects the power source fault condition from
the redundant bus, and allows the system to keep
running.
Under normal conditions the GATE pin output
voltage will rail to the VC voltage minus 0.5V, where
the VC output is regulated to 11V typically to support
any MOSFET with a Vgs rating of ±12V or greater. A
Vgs rating ≥ 12V is very common for industry
standard N-Channel MOSFETs.
Picor Corporation • picorpower.com
PI2003
Rev 1.0
Page 11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet PI2003.PDF ] | |
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