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PDF BD2270HFV Data sheet ( Hoja de datos )
| Número de pieza | BD2270HFV | |
| Descripción | Controller ICs | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
Controller ICs
for High Side NMOSFET
BD2270HFV
General Description
BD2270HFV is a gate driver for high side N-Channel
MOSFET that comes with a discharge circuit for the
output capacitive load. An internal charge pump
enables the IC to drive the gate of an external high
side NMOSFET without using any external parts. The
power up sequence is controlled by a comparator with
hysteresis function. The space saving HVSOF5
package is used.
Features
■ Built-in Charge Pump Circuit Drives the Gate of
the External N-Channel Power MOSFET
■ Built-in Discharge Circuit for Output Charge
■ Soft Start Circuit
■ Built-in Comparator with Hysteresis Function at
Control Block Input
■ Possible to drive N-channel power MOSFET
Applications
PCs
PC Peripheral Devices
Digital Consumer Electronics
Key Specifications
Input Voltage Range:
GATE Rise Time (CGATE= 500pF):
GATE Output Voltage(VCC= 5V):
Operating Current:
Standby Current:
Operating Temperature Range:
2.7V to 5.5V
130μs (Typ)
13.5V(Typ)
50μA(Typ)
5μA (Typ)
-25°C to +85°C
Package
W(Typ) D(Typ) H (Max)
HVSOF5
1.60mm x 1.60mm x 0.60mm
Typical Application Circuit
3.3V
VIN_SWITCH
VOUT_SWITCH
ON/OFF
VCC GATE DISC
AEN GND
BD2270HFV
3.3V
Load
Lineup
GATE Output Voltage(VCC= 5V)
Min Typ Max
10V 13.5V 15V
Package
Orderable Part Number
HVSOF5
Reel of 3000
BD2270HFV-TR
BD2270HFV-GTR
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
○This product has not designed protection against radioactive rays
1/18 TSZ02201-0E3E0H300230-1-2
21.Aug.2014 Rev.003
1 page  
BD2270HFV
Typical Performance Curves - continued
Datasheet
3.0
Ta=25°C
2.5
Low to High
2.0
High to Low
1.5
1.0
0.5
0.0
2
345
SSUuPpPpLlyYVVoOltLaTgAe:GVEC:CV[VCC] [V]
6
Figure 5. AEN Input Voltage vs Supply Voltage
3.0
VCC=3.0V
2.5
2.0
1.5
Low to High
High to Low
1.0
0.5
0.0
-50 0
50
AMBAImENbiTenTtETMemPpEeRraAtTuUreR: TEa:[T°Ca[]℃]
100
Figure 6. AEN Input Voltage vs Ambient Temperature
10.0
Ta=25°C
8.0
6.0
4.0
2.0
0.0
2
34 5
SUPSPuLpYplVyOVLoTltaAgGeE: V: CVCC[CV[V] ]
6
Figure 7. AEN Input Current vs Supply Voltage
10.0
8.0
VCC=3.0V
6.0
4.0
2.0
0.0
-50 0
50 100
AMBAImEbNieTnTt TEeMmPpEeRraAtuTreU:RTaE[:°CT]a[℃]
Figure 8. AEN Input Current vs Ambient Temperature
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
5/18
TSZ02201-0E3E0H300230-1-2
21.Aug.2014 Rev.003
5 Page 
BD2270HFV
Application Circuit
1. Configuration of 3.3V Load Switch
3.3V
VIN_SWITCH
VOUT_SWITCH
3.3V
Load
Datasheet
VCC GATE DISC
ON/OFF
AEN
GND
BD2270HFV
Figure 30. Configuration of 3.3V Load Switch
2. Configuration of 5V Load Switch
5V
5V
Load
ON/OFF
VCC GATE DISC
AEN
GND
BD2270HFV
Figure 31. Configuration of 5V Load Switch
A 5V load switch can be configured like the 3.3V load switch. However, if the external N-Channel MOSFET has low
VGSS, clamp it with a Zener diode or a similar component.
3. Configuration of Low-Voltage Load Switch
1.2V
3.3V
1.2V
Load
ON/OFF
VCC GATE DISC
AEN
GND
BD2270HFV
Figure 32. Configuration of Low-Voltage Load Switch
Providing BD2270HFV a separate drive power supply enables configuration of a low-voltage load switch.
4. Soft Start Configuration 3.3V
3.3V
Load
VCC GATE DISC
ON/OFF
AEN
GND
BD2270HFV
Figure 33. Soft Start Configuration
Connecting an external capacitor to the GATE terminal of BD2270HFV makes it possible to lengthen the rise time of
the N-Channel MOSFET, thus achieving reduction of the inrush current to the large-capacity load capacitor.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
11/18
TSZ02201-0E3E0H300230-1-2
21.Aug.2014 Rev.003
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet BD2270HFV.PDF ] | |
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