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ETC |
High-accuracy detection voltage
Low current consumption
CMOS RESET IC
BD48XXG/FVE series
BD49XXG/FVE series
Description
BD48XXG/FVE, BD49XXG/FVE are series of high-accuracy
detection voltage and low current consumption RESET ICs
adopting CMOS process. Total 152 types of RESET ICs including
BD48XXG/FVE series (Nch output drain output) and BD49XXG/
FVE series (CMOS output), each of which has 38 kinds in every
0.1V step (2.3~6.0V) have developed.
Features
1) Detection voltage: 0.1V step line-up 2.3~6.0V (Typ.)
2) High-accuracy detection voltage:±1.5% Max.
3) Ultra low current consumption: 0.8µA typ.
4) Nch open drain output (BD48XXG/FVE series),
CMOS output (BD49XXG/FVE series)
5) Small EMP5, SMP5C2 package
BD48XXG
BD49XXG
5
4
123
2.9±0.2
(5) (4)
1pin : RESET output
2pin : Supply voltage
3pin : GND
4pin : N.C.
5pin : N.C.
(UNIT:mm)
(1) (2) (3)
0.13
+0.05
–0.03
0.95
0.42
+0.05
–0.04
0.1
SMP5C2
BD48XXFVE
BD49XXFVE
54
123
1.6±0.05
1.0±0.05
5
4
1pin : RESET output
2pin : SUB
Connect to GND
3pin : N.C.
4pin : GND
5pin : Supply voltage
Applications
Every kind of appliances with microcontroller
and logic circuit
1 2 3 Lot No.
0.13±0.05
0.5 0.22±0.05 0.08 M
EMP5
Application Circuit
BD48XXG/FVE
VDD
VDD
VDD
BD49XXG/FVE
VDD
VDD
Vout
Vref
GND
Reset
Vref
GND
Vout
Reset
Pin No.
SMP5C2
EMP5
1
Vout
Vout
2
VDD
SUB
3
GND
NC.
4
NC.
GND
5
NC.
VDD
http://www.Datasheet4U.com
Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Power supply voltage
VDD – GND
Output voltage Nch open drain output
CMOS output
Power dissipation (SMP5C2) ∗1
Power dissipation (EMP5) ∗2
Operating temperature range
Storage temperature range
VOUT
Pd
Pd
Topr
Tstg
∗1 Derating: 1.5mW/˚C for operation above Ta=25˚C.
∗2 Derating: 1.0mW/˚C for operation above Ta=25˚C.
Limits
– 0.3 ~ + 10
GND – 0.3 ~ + 10
GND – 0.3 ~ VDD + 0.3
150
100
– 40 ~ + 85
– 55 ~ + 125
Unit
V
V
mW
mW
˚C
˚C
Electrical characteristics (Unless otherwise noted; Ta=25˚C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Detection voltage
temperature coefficient
Vs/∆T — ±0.01 — % / ˚C (–40˚C ≤ Ta ≤ 85˚C) ∗1
Hysteresis voltage
∆Vs 3.0 5.0 8.0
% RL=470KΩ, VDD=L→H→L
"H" propagation delay time TPLH
—
—
— 100
0.51 1.53
µS
CL=100pF, RL=100KΩ ∗2
Vout=GND→50%
Vs=2.3~3.1V
Circuit current when ON
Icc1
—
—
0.56 1.68
0.60 1.80
µA VDD=Vs–0.2V
Vs=3.2~4.2V
Vs=4.3~5.2V
— 0.66 1.98
Vs=5.3~6.0V
— 0.75 2.25
Vs=2.3~3.1V
Circuit current when OFF Icc2
—
—
0.80 2.40
0.85 2.55
µA VDD=Vs+2V
Vs=3.2~4.2V
Vs=4.3~5.2V
— 0.90 2.70
Vs=5.3~6.0V
Min. operating voltage
"L" output current
"H" output current
VOPL
IOL
IOH
0.95
0.4
2.0
0.7
0.9
—
1
4
1.4
1.8
—
—
—
—
—
V RL=470KΩ, VOL ≤ 0.4V
mA
VDS=0.5V, VDD=1.2V
VDS=0.5V, VDD=2.4V (VS ≤ 2.7V)
VDS=0.5V, VDD=4.8V Vs=2.3~4.2V
mA VDS=0.5V, VDD=6.0V Vs=4.3~5.2V
Output leak current
1.1 2.2
—
VDS=0.5V, VDD=8.0V Vs=5.3~6.0V
Ileak
—
— 0.1 µA VDD=VDS=10V
∗1 Since products are not screened by high and low temperatures, the specification for this temperature range is guaranteed by design,
not production tested.
∗2 TPLH : VDD=(Vs typ.–0.5V)→(Vs typ.+0.5V).
Note) RL is not necessary for CMOS output type.
Characteristic diagram and Measurement circuit
10000
1000
Output delay time "L→H"
<BD4842G/FVE>
100
10
100
1000
Capacitance (pF)
10000
35
34
33
32
31
30
29
28
27
26
25
100
Output delay time "H→L"
<BD4842G/FVE>
1000
Capacitance (pF)
10000
VS±0.5V
VDD
VOUT
GND
5V
RL=100KΩ
VS±0.5V
VDD
VOUT
GND
5V
RL=100KΩ
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