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K6F8016T6C 반도체 회로 부품 판매점

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM



Samsung semiconductor 로고
Samsung semiconductor
K6F8016T6C 데이터시트, 핀배열, 회로
K6F8016T6C Family
Preliminary
CMwOwwS.DaStaRSheAetM4U.com
Document Title
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
Draft Date
July 30, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 0.0
July 2003


K6F8016T6C 데이터시트, 핀배열, 회로
K6F8016T6C Family
Preliminary
CMwOwwS.DaStaRSheAetM4U.com
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 512K x16
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48-FBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F8016T6C families are fabricated by SAMSUNGs
advanced full CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6F8016T6C-F
Industrial(-40~85°C)
2.7~3.6V
1. The parameter is measured with 30pF test load.
2. Typical values are measured at VCC=3.3V, TA=25°C and not 100% tested
Speed
551)/70ns
Power Dissipation
Standby
(ISB1, Typ.)
A2)
Operating
(ICC1, Max)
4mA
PKG Type
48-FBGA-6.00x7.00
PIN DESCRIPTION
1 23456
A LB OE A0 A1 A2 CS2
B
I/O9 UB
A3
A4
CS1
I/O1
C
I/O10 I/O11
A5
A6 I/O2 I/O3
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory array
1024 rows
512×16 columns
Vcc
Vss
D Vss I/O12 A17 A7 I/O4 Vcc
E Vcc I/O13 Vss A16 I/O5 Vss
F
I/O15 I/O14
A14
A15
I/O6
I/O7
I/O1~I/O8
I/O9~I/O16
G
I/O16 DNU
A12
A13
WE
I/O8
H
A18 A8
A9 A10 A11 DNU
48 ball FBGA - Top View(Ball Down)
Name
Function
CS1, CS2 Chip Select Inputs
OE Output Enable Input
WE Write Enable Input
A0~A18 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Function
Vcc Power
Vss Ground
UB Upper Byte(I/O9~16)
LB Lower Byte(I/O1~8)
DNU Do Not Use
CS1
CS2
OE
WE Control Logic
UB
LB
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 0.0
July 2003




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K6F8016T6C

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM - Samsung semiconductor