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K6F4016U4G 반도체 회로 부품 판매점

256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM



Samsung semiconductor 로고
Samsung semiconductor
K6F4016U4G 데이터시트, 핀배열, 회로
K6F4016U4G Family
Preliminary
CMwwOwS.DaStaSRheAet4MU.com
Document Title
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
October 15, 2003
Remark
Preliminary
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
- 1 - Revision 0.0
October 2003


K6F4016U4G 데이터시트, 핀배열, 회로
K6F4016U4G Family
Preliminary
CMwwOwS.DaStaSRheAet4MU.com
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 256K x16 bit
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 48-TBGA-6.00x7.00
GENERAL DESCRIPTION
The K6F4016U4G families are fabricated by SAMSUNGs
advanced full CMOS process technology. The families support
industrial temperature range and 48 ball Chip Scale Package
for user flexibility of system design. The family also supports
low data retention voltage for battery back-up operation with
low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range Speed
K6F4016U4G-F Industrial(-40~85°C)
2.7~3.3V
551)/70ns
1. The parameter is measured with 30pF test load.
2. Typical value is measured at VCC=3.0V, TA=25°C and not 100% tested.
Power Dissipation
Standby
(ISB1, Typ.)
Operating
(ICC1, Max)
PKG Type
3µA2)
4mA
48-TBGA-6.00x7.00
PIN DESCRIPTION
1 23456
A LB OE A0 A1 A2 DNU
B
I/O9 UB
A3
A4 CS I/O1
C
I/O10 I/O11
A5
A6 I/O2 I/O3
D Vss I/O12 A17 A7 I/O4 Vcc
E Vcc I/O13 DNU A16 I/O5 Vss
F
I/O15 I/O14
A14
A15
I/O6
I/O7
G
I/O16 DNU
A12
A13
WE
I/O8
H
DNU
A8
A9 A10 A11 DNU
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
Row
Addresses
Row
select
Memory
Cell
Array
Vcc
Vss
I/O1~I/O8
I/O9~I/O16
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
48-TBGA: Top View (Ball Down)
Name
Function
CS Chip Select Inputs
OE Output Enable Input
WE Write Enable Input
A0~A17 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Vcc
Vss
UB
LB
DNU
Function
Power
Ground
Upper Byte(I/O9~16)
Lower Byte(I/O1~8)
Do Not Use
CS
OE
Control Logic
WE
UB
LB
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
- 2 - Revision 0.0
October 2003




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