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K6F1616R6C 반도체 회로 부품 판매점

1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM



Samsung semiconductor 로고
Samsung semiconductor
K6F1616R6C 데이터시트, 핀배열, 회로
K6F1616R6C Family
CMwwOwS.DaStaSRheAet4MU.com
Document Title
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised
- Changed ball name of E3 (Vss) & H6 (DNU) to NC.
- Deleted 85ns Speed bin.
1.0 Finalize
- Deleted 55ns Speed bin.
Draft Date
Remark
November 17, 2003 Preliminary
November 21, 2003 Preliminary
May 24, 2004
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
May 2004


K6F1616R6C 데이터시트, 핀배열, 회로
K6F1616R6C Family
CMwwOwS.DaStaSRheAet4MU.com
1M x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 1M x16
Power Supply Voltage: 1.65~1.95V
Low Data Retention Voltage: 1.0V(Min)
Three State Outputs
Package Type: 48-FBGA-6.00 x 7.00
GENERAL DESCRIPTION
The K6F1616R6C families are fabricated by SAMSUNGs
advanced full CMOS process technology. The families support
industrial operating temperature ranges and have chip scale
package for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
Speed
K6F1616R6C-F
Industrial(-40~85°C) 1.65~1.95V
70ns
1. Typical value are measured at VCC=1.8V, TA=25°C and not 100% tested.
Power Dissipation
Standby
(ISB1, Typ.)
1µA1)
Operating
(ICC1, Max)
3mA
PKG Type
48-FBGA-6.00x7.00
PIN DESCRIPTION
1 23456
A LB OE A0 A1 A2 CS2
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
Precharge circuit.
B
I/O9 UB
A3
A4
CS1
I/O1
C
I/O10 I/O11
A5
A6 I/O2 I/O3
Row
Addresses
Row
select
Memory
Cell Array
D Vss I/O12 A17 A7 I/O4 Vcc
E
Vcc I/O13 NC
A16 I/O5
Vss
F
I/O15 I/O14
A14
A15
I/O6
I/O7
I/O1~I/O8
I/O9~I/O16
G
I/O16
A19
A12
A13
WE
I/O8
H
A18 A8
A9 A10 A11 NC
48-FBGA: Top View (Ball Down)
Name
Function
CS1, CS2 Chip Select Inputs
OE Output Enable Input
WE Write Enable Input
A0~A19 Address Inputs
I/O1~I/O16 Data Inputs/Outputs
Name
Function
Vcc Power
Vss Ground
UB Upper Byte(I/O9~16)
LB Lower Byte(I/O1~8)
NC No Connection
CS1
CS2
OE
WE Control Logic
UB
LB
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
Column Addresses
Vcc
Vss
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
2 Revision 1.0
May 2004




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K6F1616R6C

1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM - Samsung semiconductor