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PDF NM29N16 Data sheet ( Hoja de datos )
| Número de pieza | NM29N16 | |
| Descripción | 16 MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM | |
| Fabricantes | National Semiconductor | |
| Logotipo |  |
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February 1996
NM29N16
16www.datasheet4u.com MBit (2M x 8 Bit) CMOS NAND FLASH E2PROM
General Description
The NM29N16 is a 16 Mbit (2 Mbyte) NAND FLASH The
device is organized as an array of 512 blocks each consist-
ing of 16 pages Each page contains 264 bytes All com-
mands and data are sent through eight I O pins To read
data a page is first transferred out of the array to an on-chip
buffer Sending successive read pulses (RE low) reads out
successive bytes of data The erase operation is implement-
ed in either a single block (4 kbytes) or on multiple blocks at
the same time Programming the device requires sending
address and data information to the on-board buffer and
then issuing the program command Typical program time
for 264 bytes is 400 ms All erase and program operations
are internally timed
The NM29N16 incorporates a number of features that make
it ideal for portable applications requiring high density stor-
age These features include single 5V operation high read
write endurance (250k cycle) and low current operation
(15 mA during reads) The device comes in a TSOP Type II
package which meets the requirements of PCMCIA cards
The NM29N16 is suited for numerous applications such as
Solid State Drives (SSD) Audio Recording and Image Stor-
age for digital cameras
Features
Y Single 5V g10% power supply
Y Write Erase endurance of 250 000 cycles target of
1 000 000 cycles
Y Fast Erase Program Times
Average Program Time of 400 ms 264 bytes
Typical Block Erase Time of 6 ms
Y Organized as 512 blocks each consisting of 16 pages
of 264 bytes
Read Program in pages of 264 bytes
Erase in Blocks of 4 kbytes
Y High Performance Read Access times
Initial 25 ms page transfer
Sequential 80 ns access
Y Low Operating Current (typical)
Typical Read current of 15 mA
Typical Program current of 40 mA
Typical Erase current of 20 mA
Standby current less than 100 mA (CMOS)
Y Command Register for Mode Control
Read
Reset
Auto Page Program
Suspend Resume
Auto Block Erase
Status Read
Y 400 mil TSOP Type II Package
Y JEDEC standard pinout
Block Diagram
C1996 National Semiconductor Corporation TL D 11915
RRD-B30M56 Printed in U S A
TL D 11915 – 1
1 page  
AC Electrical Characteristics (TA e 0 C to a70 C VCC e 5V g10%) (Continued)
Note 1 In case that CLE ALE CE are input with clock tWC exceeds 80 ns Transition time tT s 5 ns
set-up time hold time
aa
tWP
a tXX a
4tT
20 ns
40 ns 40 ns
20 ns
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Note 2 CE high to Ready time depends on Pull up resister tied to R B pin (Refer to notification (10) toward the end of this document )
TL D 11915 – 5
Note 3 In the case that CE turns to a high level after accessing the last address (263) in read mode (1) or (2) CE high time must keep equal to or greater than
300 ns when the delay time of CE against RE is 0 to 200 ns as shown below
In the second case the device will not turn to a ‘‘Busy’’ state when the CE delay time is less than 30 ns
TL D 11915 – 6
Programming and Erasing Characteristic (TA e 0 C to a 70 C VCC e 5V g10%)
Symbol
Parameter
Min Typ
Max Unit Notes
tPROG
N
Average Programming Time
Divided Number on Same Page
300 – 1000
5000
10
ms
Cycles
(1)
tBERASE Block Erasing Time
66
100 ms
tMBERASE Multi-Block Erasing Time
6 – 12
6 – 12
130 ms
tSR Suspend Input to Ready
1 5 ms
NW E
Number Write Erase Cycles
2 5 x 105 Cycles
Note 1 Refer to the notification (16) toward the end of this document
Note 2 tMBERASE depends on the number of blocks to be erased (min 6 ms a 15 ms x Erase block number)
(2)
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5 Page 
Device Operation (Continued)
SUSPEND RESUME
Because an erase operation can keep the device in a busy state for an extended period of time the NM29N16 has the ability to
suspend the erase operation to allow program or read operations to be performed on the device The block diagram and
command sequence on this operation are shown as below (Refer to the detail timing chart)
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FIGURE 8 Suspend Resume Erase Operation
TL D 11915 – 40
The B0 D0 suspend resume cycle can be repeated up to 20 times during an erase operation After the resume command input
the erase operation continues from the point at which it left off and does not have to restart
11 http www national com
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet NM29N16.PDF ] | |
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